Datasheet > HGTP5N120

HGTP5N120

更新时间： 2024-11-26 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		二极管双极性晶体管
页数	文件大小	规格书
7页	92K
描述
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

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HGTP5N120 数据手册

HGTG5N120BND, HGTP5N120BND,

HGT1S5N120BNDS

Data Sheet

January 2000

File Number 4597.2

21A, 1200V, NPT Series N-Channel IGBTs

with Anti-Parallel Hyperfast Diodes

Features

• 21A, 1200V, T = 25 C

The HGTG5N120BN, HGTP5N120BND, and

• 1200V Switching SOA Capability

HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT

designs. They are new members of the MOS gated high

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low on-

state conduction loss of a bipolar transistor. The IGBT used

is the development type TA49308. The Diode used is the

development type TA49058 (Part number RHRD6120).

• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model

Temperature Compensating SABER™ Model

www.intersil.com

• Related Literature

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC STYLE TO-247

Formerly Developmental Type TA49306.

Ordering Information

COLLECTOR

(FLANGE)

PART NUMBER

HGTG5N120BND

HGTP5N120BND

HGT1S5N120BNDS

PACKAGE

BRAND

5N120BND

TO-247

TO-220AB

TO-263AB

5N120BND

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in Tape and Reel, i.e.,

HGT1S5N120BNS9A.

JEDEC TO-220AB (ALTERNATE VERSION)

Symbol

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

12 3 4 5 6 7

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与HGTP5N120相关器件

型号	品牌	获取价格	描述	数据表
HGTP5N120BN	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs
HGTP5N120BND	FAIRCHILD	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120BND	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120BND	RENESAS	获取价格	21A, 1200V, N-CHANNEL IGBT, TO-220AB
HGTP5N120BND	ONSEMI	获取价格	1200V，NPT IGBT
HGTP5N120CN	INTERSIL	获取价格	25A, 1200V, NPT Series N-Channel IGBT
HGTP5N120CND	INTERSIL	获取价格	25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP5N120CNS	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 25A I(C) \| TO-263AB
HGTP5N120CNS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 25A I(C) \| TO-263AB
HGTP6N120B3D	RENESAS	获取价格	1200V, N-CHANNEL IGBT, TO-220AB

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