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HGTP3N60C3D_07

更新时间： 2024-09-17 04:21:43
品牌 Logo 应用领域
哈里斯 - HARRIS 二极管双极性晶体管
页数 文件大小 规格书
11页 394K
描述
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGTP3N60C3D_07 数据手册

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HGTP3N60C3D, HGT1S3N60C3D,  
HGT1S3N60C3DS  
S E M I C O N D U C T O R  
6A, 600V, UFS Series N-Channel IGBT  
with Anti-Parallel Hyperfast Diode  
May 1996  
Features  
Packaging  
JEDEC TO-220AB  
o
• 6A, 600V at T = +25 C  
C
EMITTER  
COLLECTOR  
• 600V Switching SOA Capability  
GATE  
o
• Typical Fall Time - 130ns at T = +150 C  
J
COLLECTOR (FLANGE)  
• Short Circuit Rating  
• Low Conduction Loss  
• Hyperfast Anti-Parallel Diode  
Description  
JEDEC TO-262AA  
EMITTER  
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS  
are MOS gated high voltage switching devices combining the  
best features of MOSFETs and bipolar transistors. These  
devices have the high input impedance of a MOSFET and the  
low on-state conduction loss of a bipolar transistor. The much  
lower on-state voltage drop varies only moderately between  
+25 C and +150 C. The IGBT used is the development type  
TA49113. The diode used in anti-parallel with the IGBT is the  
development type TA49055.  
COLLECTOR  
GATE  
COLLECTOR  
(FLANGE)  
o
o
JEDEC TO-263AB  
M
A
The IGBT is ideal for many high voltage switching applications  
operating at moderate frequencies where low conduction losses  
are essential.  
COLLECTOR  
(FLANGE)  
GATE  
EMITTER  
PACKAGING AVAILABILITY  
PART NUMBER  
HGTP3N60C3D  
HGT1S3N60C3D  
HGT1S3N60C3DS  
PACKAGE  
TO-220AB  
BRAND  
G3N60C3D  
G3N60C3D  
G3N60C3D  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
C
TO-262AA  
TO-263AB  
NOTE: When ordering, use the entire part number. Add the suffix 9A to  
obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.  
G
Formerly Developmental Type TA49119.  
E
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
HGTP3N60C3D, HGT1S3N60C3D  
HGT1S3N60C3DS  
UNITS  
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV  
600  
V
CES  
Collector Current Continuous  
o
At T = +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
6
3
24  
±20  
A
A
A
V
V
C
C25  
o
At T = +110 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
Collector Current Pulsed (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
Switching Safe Operating Area at T = +150 C, Fig. 14. . . . . . . . . . . . . . . . . . . . . SSOA  
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
Power Dissipation Derating T > +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T , T  
C
C110  
CM  
GES  
GEM  
±30  
o
18A at 480V  
J
o
33  
0.27  
-40 to +150  
260  
W
C
D
o
o
W/ C  
C
o
C
J
STG  
o
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
C
L
Short Circuit Withstand Time (Note 2) at V  
= 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .t  
8
µs  
GE  
SC  
NOTE:  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
o
2. V  
= 360V, T = +125 C, R = 82Ω.  
CE(PK)  
J
GE  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 4140  
Copyright © Harris Corporation 1996  
1
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