Datasheet > HGTP3N60A4

HGTP3N60A4

更新时间： 2024-09-16 22:14:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		开关双极性晶体管
页数	文件大小	规格书
10页	159K
描述
600V, SMPS Series N-Channel IGBT

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中文翻译

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数据手册
替代型号

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HGTP3N60A4 数据手册

HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4

Data Sheet

January 2000

File Number 4825

600V, SMPS Series N-Channel IGBT

Features

The HGTD3N60A4S, HGT1S3N60A4S and the

• >100kHz Operation at 390V, 3A

• 200kHz Operation at 390V, 2.5A

• 600V Switching SOA Capability

HGTP3N60A4 are MOS gated high voltage switching

devices combining the best features of MOSFETs and

bipolar transistors. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C

• 12mJ E Capability

drop varies only moderately between 25 C and 150 C.

• Low Conduction Loss

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power

supplies.

• Temperature Compensating SABER Model

www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly Developmental Type TA49327.

Packaging

Ordering Information

JEDEC TO-252AA

PART NUMBER

HGTD3N60A4S

HGT1S3N60A4S

HGTP3N60A4

PACKAGE

BRAND

3N60A4

TO-252AA

COLLECTOR

(FLANGE)

TO-263AB

TO-220AB

3N60A4

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA or the TO-263AB in tape and reel, i.e.

HGT1S3N60A4S9A

JEDEC TO-263AB

Symbol

COLLECTOR

(FLANGE)

JEDEC TO-220AB

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7...10

中文翻译

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HGTP3N60A4 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50WPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTP3N60A4相关器件

型号	品牌	获取价格	描述	数据表
HGTP3N60A4_NL	ROCHESTER	获取价格	17A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220AB, 3 PIN
HGTP3N60A4D	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP3N60A4D	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP3N60A4D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE
HGTP3N60A4D9A	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP3N60B3	INTERSIL	获取价格	7A, 600V, UFS Series N-Channel IGBTs
HGTP3N60B3	ROCHESTER	获取价格	7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3
HGTP3N60B3D	INTERSIL	获取价格	7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP3N60C3	INTERSIL	获取价格	6A, 600V, UFS Series N-Channel IGBTs
HGTP3N60C3	FAIRCHILD	获取价格	6A, 600V, UFS Series N-Channel IGBTs

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