Datasheet > HGTP3N60A4D

HGTP3N60A4D

更新时间： 2024-09-16 22:14:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管开关晶体管功率控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
10页	133K
描述
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGTP3N60A4D 数据手册

HGT1S3N60A4DS, HGTP3N60A4D

Data Sheet

January 2000

File Number 4818

600V, SMPS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diode

Features

• >100kHz Operation At 390V, 3A

• 200kHz Operation At 390V, 2.5A

• 600V Switching SOA Capability

The HGT1S3N60A4DS and the HGTP3N60A4D are MOS

gated high voltage switching devices combining the best

features of MOSFETs and bipolar transistors. These devices

have the high input impedance of a MOSFET and the low

on-state conduction loss of a bipolar transistor. The much

lower on-state voltage drop varies only moderately between

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C

• Low Conduction Loss

25 C and 150 C. The IGBT used is the development type

TA49327. The diode used in anti-parallel is the development

type TA49369.

• Temperature Compensating SABER™ Model

www.intersil.com

Packaging

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power

supplies.

JEDEC TO-263AB

COLLECTOR

(FLANGE)

Formerly Developmental Type TA49329.

Ordering Information

PART NUMBER

HGT1S3N60A4DS

HGTP3N60A4D

PACKAGE

TO-263AB

TO-220AB

BRAND

3N60A4D

JEDEC TO-220AB

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.

Symbol

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

12 3 4 5 6 7...10

中文翻译

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HGTP3N60A4D 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50WPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTP3N60A4D相关器件

型号	品牌	获取价格	描述	数据表
HGTP3N60A4D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE
HGTP3N60A4D9A	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP3N60B3	INTERSIL	获取价格	7A, 600V, UFS Series N-Channel IGBTs
HGTP3N60B3	ROCHESTER	获取价格	7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3
HGTP3N60B3D	INTERSIL	获取价格	7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP3N60C3	INTERSIL	获取价格	6A, 600V, UFS Series N-Channel IGBTs
HGTP3N60C3	FAIRCHILD	获取价格	6A, 600V, UFS Series N-Channel IGBTs
HGTP3N60C3D	HARRIS	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP3N60C3D	INTERSIL	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP3N60C3D_07	HARRIS	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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