Datasheet > HGTP3N60C3

HGTP3N60C3

更新时间： 2024-09-16 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
6页	246K
描述
6A, 600V, UFS Series N-Channel IGBTs

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HGTP3N60C3 数据手册

HGTD3N60C3S, HGTP3N60C3

Data Sheet

January 2000

File Number 4139.5

6A, 600V, UFS Series N-Channel IGBTs

Features

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated

high voltage switching devices combining the best features

of MOSFETs and bipolar transistors. These devices have

the high input impedance of a MOSFET and the low on-state

conduction loss of a bipolar transistor. The much lower

• 6A, 600V at T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Related Literature

on-state voltage drop varies only moderately between 25 C

and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-252AA

Formerly developmental type TA49113.

COLLECTOR

(FLANGE)

Ordering Information

PART NUMBER

HGTD3N60C3S

HGTP3N60C3

PACKAGE

TO-252AA

TO-220AB

BRAND

G3N60C

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA variant in Tape and Reel, i.e.,

HGTD3N60C3S9A.

JEDEC TO-220AB

Symbol

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6

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与HGTP3N60C3相关器件

型号	品牌	获取价格	描述	数据表
HGTP3N60C3D	HARRIS	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP3N60C3D	INTERSIL	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP3N60C3D_07	HARRIS	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP5N120	FAIRCHILD	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120BN	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs
HGTP5N120BND	FAIRCHILD	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120BND	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120BND	RENESAS	获取价格	21A, 1200V, N-CHANNEL IGBT, TO-220AB
HGTP5N120BND	ONSEMI	获取价格	1200V，NPT IGBT

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