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HGTP3N60A4D_NL

更新时间： 2024-09-17 19:47:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网栅瞄准线功率控制晶体管
页数 文件大小 规格书
9页 113K
描述
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

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HGTP3N60A4D_NL 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknown风险等级：5.59
其他特性：LOW CONDUCTION LOSS外壳连接：COLLECTOR
最大集电极电流 (IC)：17 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODEJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：180 ns
标称接通时间 (ton)：17.5 nsBase Number Matches：1

HGTP3N60A4D_NL 数据手册

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HGT1S3N60A4DS, HGTP3N60A4D  
Data Sheet  
December 2001  
600V, SMPS Series N-Channel IGBT with  
Anti-Parallel Hyperfast Diode  
Features  
• >100kHz Operation At 390V, 3A  
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS  
gated high voltage switching devices combining the best  
features of MOSFETs and bipolar transistors.These devices  
have the high input impedance of a MOSFET and the low  
on-state conduction loss of a bipolar transistor. The much  
lower on-state voltage drop varies only moderately between  
25 C and 150 C. The IGBT used is the development type  
TA49327. The diode used in anti-parallel is the development  
type TA49369.  
• 200kHz Operation At 390V, 2.5A  
• 600V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C  
J
• Low Conduction Loss  
o
o
• Temperature Compensating SABER™ Model  
www.Fairchildsemi.com  
Packaging  
This IGBT is ideal for many high voltage switching  
applications operating at high frequencies where low  
conduction losses are essential.This device has been  
optimized for high frequency switch mode power  
supplies.  
JEDEC TO-263AB  
COLLECTOR  
(FLANGE)  
G
E
Formerly Developmental Type TA49329.  
Ordering Information  
PART NUMBER  
HGT1S3N60A4DS  
HGTP3N60A4D  
PACKAGE  
TO-263AB  
TO-220AB  
BRAND  
3N60A4D  
3N60A4D  
JEDEC TO-220AB  
E
C
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.  
G
Symbol  
C
COLLECTOR  
(FLANGE)  
G
E
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGT1S3N60A4DS, HGTP3N60A4D Rev. B  
1234567...9

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