Datasheet > HGTP3N60B3

HGTP3N60B3

更新时间： 2024-09-16 22:14:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关电动机控制瞄准线双极性晶体管局域网
页数	文件大小	规格书
7页	144K
描述
7A, 600V, UFS Series N-Channel IGBTs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HGTP3N60B3 数据手册

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3

Data Sheet

January 2000

File Number 4368.1

7A, 600V, UFS Series N-Channel IGBTs

Features

The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3

are MOS gated high voltage switching devices combining

the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET

and the low on-state conduction loss of a bipolar transistor.

The much lower on-state voltage drop varies only

• 7A, 600V, T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

moderately between 25 C and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC TO-220AB

COLLECTOR

(FLANGE)

Formerly Developmental Type TA49192.

Ordering Information

PART NUMBER

HGTD3N60B3S

HGT1S3N60B3S

HGTP3N60B3

PACKAGE

BRAND

G3N60B

TO-252AA

JEDEC TO-263AB

COLLECTOR

TO-263AB

TO-220AB

G3N60B3

(FLANGE)

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.

HGTD3N60B3S9A.

Symbol

JEDEC TO-252AA

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

中文翻译

下载PDF

与HGTP3N60B3相关器件

型号	品牌	获取价格	描述	数据表
HGTP3N60B3D	INTERSIL	获取价格	7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP3N60C3	INTERSIL	获取价格	6A, 600V, UFS Series N-Channel IGBTs
HGTP3N60C3	FAIRCHILD	获取价格	6A, 600V, UFS Series N-Channel IGBTs
HGTP3N60C3D	HARRIS	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP3N60C3D	INTERSIL	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP3N60C3D_07	HARRIS	获取价格	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP5N120	FAIRCHILD	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120BN	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs
HGTP5N120BND	FAIRCHILD	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

与HGTP3N60B3相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

19
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

17
SL74HC10N：高性能三输入与非门解析
2024-09-03

94
AIC1781A 电池充电控制器深度解析
2024-09-03

84

产品中心

服务支持

精选活动

关于我们

帮助中心

HGTP3N60B3

HGTP3N60B3 数据手册

与HGTP3N60B3相关器件

与HGTP3N60B3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HGTP3N60B3

HGTP3N60B3 数据手册

与HGTP3N60B3相关器件

与HGTP3N60B3相关文章

您还可以找

您在本页遇到什么问题？