Datasheet > HGTP2N120BND

HGTP2N120BND

更新时间： 2024-09-17 20:22:23

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HGTP2N120BND 数据手册

HGTP2N120BND, HGT1S2N120BNDS

Data Sheet

January 2000

File Number 4698.2

12A, 1200V, NPT Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Features

• 12A, 1200V, T = 25 C

The HGTP2N120BND and HGT1S2N120BNDS are

• 1200V Switching SOA Capability

Non-Punch Through (NPT) IGBT designs. They are new

members of the MOS gated high voltage switching IGBT

family. IGBTs combine the best features of MOSFETs and

bipolar transistors. This device has the high input impedance

of a MOSFET and the low on-state conduction loss of a

bipolar transistor. The IGBT used is the development type

TA49312. The Diode used is the development type TA49056.

• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model

www.intersil.com

• Related Literature

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

Formerly Developmental Type TA49310.

Ordering Information

COLLECTOR

(FLANGE)

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

2N120BND

HGTP2N120BND

HGT1S2N120BNDS

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in Tape and Reel, i.e.,

HGT1S2N120BNDS9A.

JEDEC TO-263AB

Symbol

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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与HGTP2N120BND相关器件

型号	品牌	获取价格	描述	数据表
HGTP2N120CN	FAIRCHILD	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGTP2N120CN	INTERSIL	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGTP2N120CN_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB
HGTP2N120CN9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel
HGTP2N120CND	INTERSIL	获取价格	13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP2N120CNDS	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor
HGTP2N120CNDS9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor
HGTP2N120CNS	FAIRCHILD	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGTP3N60A4	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT
HGTP3N60A4	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT

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