Datasheet > HGTP2N120CND

HGTP2N120CND

更新时间： 2024-11-08 22:35:11

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管晶体管功率控制瞄准线双极性晶体管局域网
页数	文件大小	规格书
7页	96K
描述
13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

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HGTP2N120CND 数据手册

HGTP2N120CND, HGT1S2N120CNDS

Data Sheet

January 2000

File Number 4681.2

13A, 1200V, NPT Series N-Channel IGBTs

with Anti-Parallel Hyperfast Diodes

Features

• 13A, 1200V, T = 25 C

The HGTP2N120CND and HGT1S2N120CNDS are

Non-Punch Through (NPT) IGBT designs. They are new

members of the MOS gated high voltage switching IGBT

family. IGBTs combine the best features of MOSFETs and

bipolar transistors. This device has the high input impedance

of a MOSFET and the low on-state conduction loss of a

bipolar transistor. The IGBT used is the development type

TA49313. The Diode used is the development type TA49056

(Part number RHRD4120).

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model

Temperature Compensating SABER™ Model

www.intersil.com

• Related Literature

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

Formerly Developmental Type TA49311.

Ordering Information

COLLECTOR

(FLANGE)

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

2N120CND

HGTP2N120CND

HGT1S2N120CNDS

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in Tape and Reel, i.e.,

HGT1S2N120CNDS9A.

JEDEC TO-263AB

Symbol

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

12 3 4 5 6 7

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与HGTP2N120CND相关器件

型号	品牌	获取价格	描述	数据表
HGTP2N120CNDS	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor
HGTP2N120CNDS9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor
HGTP2N120CNS	FAIRCHILD	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGTP3N60A4	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT
HGTP3N60A4	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT
HGTP3N60A4	ROCHESTER	获取价格	17A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220AB, 3 PIN
HGTP3N60A4	ONSEMI	获取价格	IGBT，600 V，SMPS
HGTP3N60A4_NL	ROCHESTER	获取价格	17A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220AB, 3 PIN
HGTP3N60A4D	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP3N60A4D	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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