是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最大集电极电流 (IC): | 13 A |
集电极-发射极最大电压: | 1200 V | 最大降落时间(tf): | 320 ns |
门极-发射极最大电压: | 20 V | JESD-609代码: | e0 |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 104 W | 最大上升时间(tr): | 15 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HGTP2N120CND | INTERSIL |
获取价格 |
13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes | |
HGTP2N120CNDS | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor | |
HGTP2N120CNDS9A | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor | |
HGTP2N120CNS | FAIRCHILD |
获取价格 |
13A, 1200V, NPT Series N-Channel IGBT | |
HGTP3N60A4 | FAIRCHILD |
获取价格 |
600V, SMPS Series N-Channel IGBT | |
HGTP3N60A4 | INTERSIL |
获取价格 |
600V, SMPS Series N-Channel IGBT | |
HGTP3N60A4 | ROCHESTER |
获取价格 |
17A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220AB, 3 PIN | |
HGTP3N60A4 | ONSEMI |
获取价格 |
IGBT,600 V,SMPS | |
HGTP3N60A4_NL | ROCHESTER |
获取价格 |
17A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220AB, 3 PIN | |
HGTP3N60A4D | FAIRCHILD |
获取价格 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |