Datasheet > HGTP2N120BN

HGTP2N120BN

更新时间： 2024-09-16 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
7页	88K
描述
12A, 1200V, NPT Series N-Channel IGBT

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HGTP2N120BN 数据手册

HGTP2N120BN, HGTD2N120BNS,

HGT1S2N120BNS

Data Sheet

January 2000

File Number 4696.2

12A, 1200V, NPT Series N-Channel IGBT

Features

The HGTP2N120BN, HGTD2N120BNS, and

• 12A, 1200V, T = 25 C

HGT1S2N120BNS are Non-Punch Through (NPT) IGBT

designs. They are new members of the MOS gated high

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low

on-state conduction loss of a bipolar transistor.

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

• Thermal Impedance SPICE Model

Temperature Compensating SABER™ Model

www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly Developmental Type TA49312.

Ordering Information

Packaging

PART NUMBER

PACKAGE

BRAND

2N120BN

JEDEC TO-220AB

HGTP2N120BN

TO-220AB

HGTD2N120BNS

HGT1S2N120BNS

TO-252AA

TO-263AB

2N120BN

COLLECTOR

(FLANGE)

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB and TO-252AA variant in Tape and Reel,

e.g., HGT1S2N120BNS9A.

Symbol

JEDEC TO-252AA

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

12 3 4 5 6 7

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与HGTP2N120BN相关器件

型号	品牌	获取价格	描述	数据表
HGTP2N120BND	INTERSIL	获取价格	12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP2N120BND	RENESAS	获取价格	暂无描述
HGTP2N120CN	FAIRCHILD	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGTP2N120CN	INTERSIL	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGTP2N120CN_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB
HGTP2N120CN9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel
HGTP2N120CND	INTERSIL	获取价格	13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP2N120CNDS	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor
HGTP2N120CNDS9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor
HGTP2N120CNS	FAIRCHILD	获取价格	13A, 1200V, NPT Series N-Channel IGBT

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