Datasheet > HGTP20N60B3

HGTP20N60B3

更新时间： 2024-09-16 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
6页	141K
描述
40A, 600V, UFS Series N-Channel IGBTs

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

HGTP20N60B3 数据手册

HGT1S20N60B3S, HGTP20N60B3,

HGTG20N60B3

Data Sheet

January 2000

File Number 3723.6

40A, 600V, UFS Series N-Channel IGBTs

Features

The HGT1S20N60B3S, the HGTP20N60B3 and the

• 40A, 600V at T = 25 C

HGTG20N60B3 are Generation III MOS gated high voltage

switching devices combining the best features of MOSFETs

and bipolar transistors. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150 C

• Short Circuit Rated

• Low Conduction Loss

drop varies only moderately between 25 C and 150 C.

• Related Literature

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-263AB

Formerly developmental type TA49050.

Ordering Information

COLLECTOR

(FLANGE)

PART NUMBER

PACKAGE

BRAND

G20N60B3

HGTP20N60B3

TO-220AB

HGT1S20N60B3S

HGTG20N60B3

TO-263AB

TO-247

G20N60B3

JEDEC TO-220AB (ALTERNATE VERSION)

HG20N60B3

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A.

Symbol

COLLECTOR

(FLANGE)

JEDEC STYLE TO-247

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6

中文翻译

下载PDF

HGTP20N60B3 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50WPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTP20N60B3相关器件

型号	品牌	获取价格	描述	数据表
HGTP20N60C3	INTERSIL	获取价格	45A, 600V, UFS Series N-Channel IGBT
HGTP20N60C3	FAIRCHILD	获取价格	45A, 600V, UFS Series N-Channel IGBT
HGTP20N60C3R	FAIRCHILD	获取价格	40A, 600V, Rugged UFS Series N-Channel IGBTs
HGTP2N120BN	INTERSIL	获取价格	12A, 1200V, NPT Series N-Channel IGBT
HGTP2N120BND	INTERSIL	获取价格	12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP2N120BND	RENESAS	获取价格	暂无描述
HGTP2N120CN	FAIRCHILD	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGTP2N120CN	INTERSIL	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGTP2N120CN_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB
HGTP2N120CN9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel

与HGTP20N60B3相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

18
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

16
SL74HC10N：高性能三输入与非门解析
2024-09-03

93
AIC1781A 电池充电控制器深度解析
2024-09-03

83

产品中心

服务支持

精选活动

关于我们

帮助中心

HGTP20N60B3

HGTP20N60B3 数据手册

HGTP20N60B3 替代型号

与HGTP20N60B3相关器件

与HGTP20N60B3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HGTP20N60B3

HGTP20N60B3 数据手册

HGTP20N60B3 替代型号

与HGTP20N60B3相关器件

与HGTP20N60B3相关文章

您还可以找

您在本页遇到什么问题？