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HGTP14N41G3VL PDF预览

HGTP14N41G3VL

更新时间: 2024-09-17 10:49:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管
页数 文件大小 规格书
6页 189K
描述
14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs

HGTP14N41G3VL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.92
外壳连接:COLLECTOR最大集电极电流 (IC):25 A
集电极-发射极最大电压:445 V配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
门极发射器阈值电压最大值:2.2 V门极-发射极最大电压:12 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):136 W认证状态:Not Qualified
最大上升时间(tr):3800 ns子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AUTOMOTIVE IGNITION晶体管元件材料:SILICON
标称断开时间 (toff):9000 ns标称接通时间 (ton):3450 ns

HGTP14N41G3VL 数据手册

 浏览型号HGTP14N41G3VL的Datasheet PDF文件第2页浏览型号HGTP14N41G3VL的Datasheet PDF文件第3页浏览型号HGTP14N41G3VL的Datasheet PDF文件第4页浏览型号HGTP14N41G3VL的Datasheet PDF文件第5页浏览型号HGTP14N41G3VL的Datasheet PDF文件第6页 
HGT1S14N41G3VLS, HGTP14N41G3VL  
Data Sheet  
December 2001  
14A, 410V N-Channel, Logic Level, Voltage  
Clamping IGBTs  
Features  
o
• Ignition Energy = 340mJ at T  
= 25 C  
J (STARTING)  
This N-Channel IGBT is a MOS gated, logic level device  
which is intended to be used as an ignition coil driver in  
automotive ignition circuits. Unique features include an  
active voltage clamp between the collector and the gate  
which provides Self Clamped Inductive Switching (SCIS)  
capability in ignition circuits. Internal diodes provide ESD  
protection for the logic level gate. Both a series resistor and  
a shunt resister are provided in the gate circuit  
o
Typical Internal Clamp Voltage = 410V at T = 25 C  
J
• Logic Level Gate Drive  
• ESD Gate Protection  
o
• T = 175 C  
J
• Internal Series and Shunt Gate Resistors  
• 24V Reverse Battery Capability  
• Related Literature  
Formerly Developmental Type TA49360.  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Ordering Information  
PART NUMBER  
HGT1S14N41G3VLS  
HGTP14N41G3VL  
PACKAGE  
TO-263AB  
TO-220AB  
BRAND  
14N41GVL  
14N41GVL  
Packaging  
JEDEC TO-263AB  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB in tape and reel, i.e. HGT1S14N41G3VLS9A  
COLLECTOR  
(FLANGE)  
G
E
Symbol  
COLLECTOR  
R
1
JEDEC TO-220AB  
GATE  
E
R
2
C
G
EMITTER  
COLLECTOR  
(FLANGE)  
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGT1S14N41G3VLS, HGTP14N41G3VL Rev. B  

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