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HGTP20N60B3 PDF预览

HGTP20N60B3

更新时间： 2024-09-16 22:51:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管电动机控制瞄准线双极性晶体管栅局域网
页数 文件大小 规格书
6页 141K
描述
40A, 600V, UFS Series N-Channel IGBTs

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中文翻译

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HGTP20N60B3 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：unknown
风险等级：5.15其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：40 A
集电极-发射极最大电压：600 V配置：SINGLE
最大降落时间（tf）：175 ns门极发射器阈值电压最大值：6 V
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：165 W认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：360 ns标称接通时间 (ton)：45 ns
Base Number Matches：1

HGTP20N60B3 数据手册

 浏览型号HGTP20N60B3的Datasheet PDF文件第2页浏览型号HGTP20N60B3的Datasheet PDF文件第3页浏览型号HGTP20N60B3的Datasheet PDF文件第4页浏览型号HGTP20N60B3的Datasheet PDF文件第5页浏览型号HGTP20N60B3的Datasheet PDF文件第6页 
HGT1S20N60B3S, HGTP20N60B3,  
HGTG20N60B3  
Data Sheet  
January 2000  
File Number 3723.6  
40A, 600V, UFS Series N-Channel IGBTs  
Features  
o
The HGT1S20N60B3S, the HGTP20N60B3 and the  
• 40A, 600V at T = 25 C  
C
HGTG20N60B3 are Generation III MOS gated high voltage  
switching devices combining the best features of MOSFETs  
and bipolar transistors. These devices have the high input  
impedance of a MOSFET and the low on-state conduction  
loss of a bipolar transistor. The much lower on-state voltage  
• 600V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150 C  
• Short Circuit Rated  
o
o
• Low Conduction Loss  
drop varies only moderately between 25 C and 150 C.  
• Related Literature  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Packaging  
JEDEC TO-263AB  
Formerly developmental type TA49050.  
Ordering Information  
COLLECTOR  
(FLANGE)  
G
PART NUMBER  
PACKAGE  
BRAND  
G20N60B3  
E
HGTP20N60B3  
TO-220AB  
HGT1S20N60B3S  
HGTG20N60B3  
TO-263AB  
TO-247  
G20N60B3  
JEDEC TO-220AB (ALTERNATE VERSION)  
HG20N60B3  
E
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A.  
Symbol  
COLLECTOR  
(FLANGE)  
C
G
JEDEC STYLE TO-247  
E
C
E
G
COLLECTOR  
(FLANGE)  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
1
123456

中文翻译

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HGTP20N60B3 替代型号

型号 品牌 替代类型 描述 数据表
SGP15N120 INFINEON

类似代替

 Fast IGBT in NPT-technology
STGP8NC60KD STMICROELECTRONICS

功能相似

 600 V - 8 A - short circuit rugged IGBT

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