Datasheet > HGTP15N50E1

HGTP15N50E1

更新时间： 2024-11-06 22:34:43

品牌	Logo	应用领域
英特矽尔 - INTERSIL		双极性晶体管
页数	文件大小	规格书
5页	39K
描述
15A, 20A, 400V and 500V N-Channel IGBTs

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中文翻译

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数据手册

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HGTP15N50E1 数据手册

HGTP15N40C1, 40E1, 50C1, 50E1,

HGTH20N40C1, 40E1, 50C1, 50E1

15A, 20A,

400V and 500V N-Channel IGBTs

April 1995

Features

Packages

HGTH-TYPES JEDEC TO-218AC

• 15A and 20A, 400V and 500V

• V_CE(ON)2.5V

EMITTER

COLLECTOR

• T_FI1µs, 0.5µs

GATE

COLLECTOR

(FLANGE)

• Low On-State Voltage

• Fast Switching Speeds

• High Input Impedance

• No Anti-Parallel Diode

Applications

HGTP-TYPES JEDEC TO-220AB

• Power Supplies

• Motor Drives

EMITTER

COLLECTOR

(FLANGE)

• Protection Circuits

GATE

Description

The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1,

HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1

are n-channel enhancement-mode insulated gate bipolar transistors

(IGBTs) designed for high-voltage, low on-dissipation applications such as

switching regulators and motor drivers. These types can be operated

directly from low-power integrated circuits.

Terminal Diagram

PACKAGING AVAILABILITY

N-CHANNEL ENHANCEMENT MODE

PART NUMBER

HGTH20N40C1

HGTH20N40E1

HGTH20N50C1

HGTH20N50E1

HGTP15N40C1

HGTP15N40E1

HGTP15N50C1

HGTP15N50E1

PACKAGE

TO-218AC

BRAND

G20N40C1

TO-218AC

TO-220AB

G20N40E1

G20N50C1

G20N50E1

G15N40C1

G15N40E1

G15N50C1

G15N50E1

NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings T = +25 C, Unless Otherwise Speciﬁed

HGTH20N40C1 HGTH20N50C1 HGTP15N40C1 HGTP15N50C1

HGTH20N40E1 HGTH20N50E1 HGTP15N40E1 HGTP15N50E1 UNITS

Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V_CES

Collector-Gate Voltage R_GE= 1MΩ. . . . . . . . . . . . . . . . V_CGR

Reverse Collector-Emitter Voltage . . . . . . . . . . . . V_CES(rev.)

Gate-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GE

Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . I_C

Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM

Power Dissipation at T_C= +25^oC . . . . . . . . . . . . . . . . . . . P_D

Power Dissipation Derating T_C> +25^oC . . . . . . . . . . . . . . . . .

400

-5

±20

100

0.8

500

-5

±20

400

-5

±20

500

-5

±20

W/^oC

^oC

100

0.8

-55 to +150

0.6

-55 to +150

0.6

-55 to +150

Operating and Storage Junction Temperature Range . . . T_J, T_STG-55 to +150

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 2174.3

3-61

12 3 4 5

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与HGTP15N50E1相关器件

型号	品牌	获取价格	描述	数据表
HGTP1N120BN	FAIRCHILD	获取价格	5.3A, 1200V, NPT Series N-Channel IGBT
HGTP1N120BN	INTERSIL	获取价格	5.3A, 1200V, NPT Series N-Channel IGBT
HGTP1N120BND	INTERSIL	获取价格	5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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HGTP20N35G3VL	INTERSIL	获取价格	20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
HGTP20N35G3VL	FAIRCHILD	获取价格	20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
HGTP20N36G3VL	FAIRCHILD	获取价格	20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGTP20N60A4	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBTs
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