HGTP20N35G3VL,
HGT1S20N35G3VL,
HGT1S20N35G3VLS
20A, 350V N-Channel,
Logic Level, Voltage Clamping IGBTs
April 1995
Features
Packages
JEDEC TO-220AB
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
COLLECTOR
GATE
EMITTER
COLLECTOR
(FLANGE)
• Ignition Energy Capable
JEDEC TO-262AA
EMITTER
Description
COLLECTOR
GATE
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt resis-
tor are provided in the gate circuit.
COLLECTOR
(FLANGE)
JEDEC TO-263AB
COLLECTOR
(FLANGE)
M
A
PACKAGING AVAILABILITY
GATE
PART NUMBER
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
PACKAGE
T0-220AB
T0-262AA
T0-263AB
BRAND
20N35GVL
EMITTER
20N35GVL
20N35GVL
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.
COLLECTOR
The development type number for this device is TA49076.
R1
GATE
R2
EMITTER
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
UNITS
Collector-Emitter Bkdn Voltage At 10mA, R = 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BV
375
24
20
20
±10
26
18
775
150
V
V
A
A
V
GE
CER
ECS
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
o
Collector Current Continuous At V = 5.0V, T = +25 C, Figure 7 . . . . . . . . . . . . . I
GE
C
C25
o
At V = 5.0V, T = +100 C . . . . . . . . . . . . . . . . . . . .I
GE
C
C100
Gate-Emitter-Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
SCIS
SCIS
o
Inductive Switching Current At L = 2.3mH, T = +25 C . . . . . . . . . . . . . . . . . . . . . I
A
A
C
o
At L = 2.3mH, T = +175 C . . . . . . . . . . . . . . . . . . . . . I
C
o
Collector to Emitter Avalanche Energy At L = 2.3mH, T = +25 C . . . . . . . . . . . . . . E
Power Dissipation Total At T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating T > +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
mJ
W
C
AS
o
C
D
o
o
1.0
-40 to +175
260
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T , T
C
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
6
KV
NOTE: May be exceeded if I is limited to 10mA.
GEM
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 4006
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