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HGTP14N36G3VL

更新时间： 2024-11-06 22:13:35
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管双极性晶体管栅汽车点火局域网
页数 文件大小 规格书
6页 113K
描述
14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs

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HGTP14N36G3VL 数据手册

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HGTP14N36G3VL,  
HGT1S14N36G3VL,  
HGT1S14N36G3VLS  
14A, 360V N-Channel,  
Logic Level, Voltage Clamping IGBTs  
June 1995  
Features  
Packages  
JEDEC TO-220AB  
• Logic Level Gate Drive  
• Internal Voltage Clamp  
• ESD Gate Protection  
• TJ = 175oC  
EMITTER  
COLLECTOR  
GATE  
COLLECTOR  
(FLANGE)  
• Ignition Energy Capable  
JEDEC TO-262AA  
Description  
EMITTER  
COLLECTOR  
This N-Channel IGBT is a MOS gated, logic level device  
which is intended to be used as an ignition coil driver in auto-  
motive ignition circuits. Unique features include an active  
voltage clamp between the collector and the gate which pro-  
vides Self Clamped Inductive Switching (SCIS) capability in  
ignition circuits. Internal diodes provide ESD protection for  
the logic level gate. Both a series resistor and a shunt  
resister are provided in the gate circuit.  
GATE  
COLLECTOR  
(FLANGE)  
JEDEC TO-263AB  
COLLECTOR  
(FLANGE)  
M
A
PACKAGING AVAILABILITY  
GATE  
PART NUMBER  
HGTP14N36G3VL  
HGT1S14N36G3VL  
HGT1S14N36G3VLS  
PACKAGE  
TO-220AB  
TO-262AA  
TO-263AB  
BRAND  
14N36GVL  
EMITTER  
14N36GVL  
14N36GVL  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
COLLECTOR  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in the tape and reel, i.e.,  
HGT1S14N36G3VLS9A.  
The development type number for this device is TA49021.  
R1  
GATE  
R2  
EMITTER  
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
HGTP14N36G3VL,  
HGT1S14N36G3VL,  
HGT1S14N36G3VLS  
UNITS  
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
390  
24  
18  
14  
±10  
17  
V
V
A
A
V
CER  
ECS  
o
Collector Current Continuous at V = 5V, T = +25 C. . . . . . . . . . . . . . . . . . . . . . . I  
GE  
C
C25  
C100  
GEM  
SCIS  
SCIS  
o
at V = 5V, T = +100 C. . . . . . . . . . . . . . . . . . . . . .I  
GE  
C
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
o
Inductive Switching Current at L = 2.3mH, T = +25 C . . . . . . . . . . . . . . . . . . . . . . .I  
A
A
C
o
at L = 2.3mH, T = + 175 C . . . . . . . . . . . . . . . . . . . . . .I  
12  
C
o
Collector to Emitter Avalanche Energy at L = 2.3mH, T = +25 C. . . . . . . . . . . . . . . E  
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
Power Dissipation Derating T > +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
332  
100  
0.67  
-40 to +175  
260  
6
mJ  
W
C
AS  
o
C
D
o
o
W/ C  
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T , T  
C
C
J
STG  
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD  
L
KV  
NOTE: May be exceeded if I is limited to 10mA.  
GEM  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 4008  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
3-55  
123456

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