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HGTP12N60D1

更新时间： 2024-11-24 22:51:19
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管电动机控制双极性晶体管栅局域网
页数 文件大小 规格书
4页 35K
描述
12A, 600V N-Channel IGBT

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HGTP12N60D1 数据手册

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HGTP12N60D1  
12A, 600V N-Channel IGBT  
April 1995  
Features  
Package  
JEDEC TO-220AB  
• 12A, 600V  
EMITTER  
• Latch Free Operation  
• Typical Fall Time <500ns  
• High Input Impedance  
• Low Conduction Loss  
COLLECTOR  
GATE  
COLLECTOR  
(FLANGE)  
Description  
The IGBT is a MOS gated high voltage switching device  
combining the best features of MOSFETs and bipolar  
transistors. The device has the high input impedance of a  
MOSFET and the low on-state conduction loss of a bipolar  
transistor. The much lower on-state voltage drop varies only  
moderately between +25oC and +150oC.  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
C
The IGBTs are ideal for many high voltage switching applica-  
tions operating at frequencies where low conduction losses  
are essential, such as: AC and DC motor controls, power  
supplies and drivers for solenoids, relays and contactors.  
G
PACKAGING AVAILABILITY  
E
PART NUMBER  
PACKAGE  
TO-220AB  
BRAND  
G12N60D1  
HGTP12N60D1  
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
HGTP12N60D1  
UNITS  
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
600  
600  
21  
V
V
A
A
A
V
-
CES  
Collector-Gate Voltage R = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
GE  
CGR  
o
Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
C25  
o
at V = 15V at T = +90 C . . . . . . . . . . . . . . . . . . . I  
12  
GE  
C
C90  
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
48  
CM  
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
±25  
GES  
o
Switching Safe Operating Area at T = +150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA  
30A at 0.8 BV  
J
CES  
o
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
75  
W
C
D
o
o
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
0.6  
W/ C  
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T , T  
-55 to +150  
260  
C
J
STG  
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
C
L
NOTE:  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
INTERSIL VmCORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:  
4,364,073  
4,587,713  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,417,385  
4,598,461  
4,644,637  
4,801,986  
4,883,767  
4,430,792  
4,605,948  
4,682,195  
4,803,533  
4,888,627  
4,443,931  
4,618,872  
4,684,413  
4,809,045  
4,890,143  
4,466,176  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,516,143  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,532,534  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,567,641  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 2830.3  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
3-38  
1234

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