Datasheet > HGTP12N60C3R

HGTP12N60C3R

更新时间： 2024-11-07 20:59:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		局域网电动机控制栅瞄准线晶体管
页数	文件大小	规格书
7页	169K
描述
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB

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技术参数
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HGTP12N60C3R 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.11
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	24 A	集电极-发射极最大电压：	600 V
配置：	SINGLE	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	480 ns
标称接通时间 (ton)：	30 ns	Base Number Matches：	1

HGTP12N60C3R 数据手册

HGTP12N60C3, HGT1S12N60C3S

Data Sheet

December 2001

24A, 600V, UFS Series N-Channel IGBTs

Features

The HGTP12N60C3 and HGT1S12N60C3S are MOS gated

high voltage switching devices combining the best features

of MOSFETs and bipolar transistors. These devices have the

high input impedance of a MOSFET and the low on-state

conduction loss of a bipolar transistor. The much lower

• 24A, 600V at T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

on-state voltage drop varies only moderately between 25 C

and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC TO-220AB

EMITTER

COLLECTOR

GATE

Formerly Developmental Type TA49123.

COLLECTOR

(FLANGE)

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

P12N60C3

S12N60C3

HGTP12N60C3

HGT1S12N60C3S

JEDEC TO-263AB

COLLECTOR

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB variant in Tape and Reel, i.e.,

HGT1S12N60C3S9A.

GATE

(FLANGE)

Symbol

EMITTER

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTP12N60C3, HGT1S12N60C3S Rev. B

12 3 4 5 6 7

中文翻译

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与HGTP12N60C3R相关器件

型号	品牌	获取价格	描述	数据表
HGTP12N60C3S	RENESAS	获取价格	HGTP12N60C3S
HGTP12N60C3S9A	RENESAS	获取价格	HGTP12N60C3S9A
HGTP12N60D1	INTERSIL	获取价格	12A, 600V N-Channel IGBT
HGTP14N36G3VL	FAIRCHILD	获取价格	14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGTP14N36G3VL	INTERSIL	获取价格	14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
HGTP14N37G3VL	FAIRCHILD	获取价格	14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
HGTP14N37G3VL	RENESAS	获取价格	25A, N-CHANNEL IGBT, TO-220AB
HGTP14N40F3VL	FAIRCHILD	获取价格	330mJ, 400V, N-Channel Ignition IGBT
HGTP14N40F3VL	INTERSIL	获取价格	14A, 400V N-Channel, Logic Level Voltage Clamping IGBT
HGTP14N41G3VL	FAIRCHILD	获取价格	14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs

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