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HGTP12N60C3 PDF预览

HGTP12N60C3

更新时间： 2024-09-16 21:54:47
品牌 Logo 应用领域
哈里斯 - HARRIS 晶体晶体管电动机控制瞄准线双极性晶体管栅局域网
页数 文件大小 规格书
6页 135K
描述
24A, 600V, UFS Series N-Channel IGBTs

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中文翻译

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HGTP12N60C3 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
风险等级：5.65Is Samacsys：N
其他特性：LOW CONDUCTION LOSS外壳连接：COLLECTOR
最大集电极电流 (IC)：24 A集电极-发射极最大电压：600 V
配置：SINGLE最大降落时间（tf）：275 ns
门极发射器阈值电压最大值：6 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：104 W最大功率耗散 (Abs)：104 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
最大关闭时间（toff）：400 ns标称断开时间 (toff)：270 ns
标称接通时间 (ton)：14 nsVCEsat-Max：2 V
Base Number Matches：1

HGTP12N60C3 数据手册

 浏览型号HGTP12N60C3的Datasheet PDF文件第2页浏览型号HGTP12N60C3的Datasheet PDF文件第3页浏览型号HGTP12N60C3的Datasheet PDF文件第4页浏览型号HGTP12N60C3的Datasheet PDF文件第5页浏览型号HGTP12N60C3的Datasheet PDF文件第6页 
HGTP12N60C3, HGT1S12N60C3,  
HGT1S12N60C3S  
S E M I C O N D U C T O R  
24A, 600V, UFS Series N-Channel IGBTs  
January 1997  
Features  
Description  
o
• 24A, 600V at T = 25 C  
C
The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S  
are MOS gated high voltage switching devices combining the  
best features of MOSFETs and bipolar transistors. These  
• 600V Switching SOA Capability  
o
• Typical Fall Time . . . . . . . . . . . . . . 230ns at T = 150 C  
J
devices have the high input impedance of a MOSFET and the  
low on-state conduction loss of a bipolar transistor. The much  
lower on-state voltage drop varies only moderately between  
• Short Circuit Rating  
• Low Conduction Loss  
o
o
25 C and 150 C.  
The IGBT is ideal for many high voltage switching applications  
operating at moderate frequencies where low conduction losses  
are essential, such as: AC and DC motor controls, power sup-  
plies and drivers for solenoids, relays and contactors.  
Ordering Information  
PART NUMBER  
HGTP12N60C3  
PACKAGE  
TO-220AB  
BRAND  
P12N60C3  
HGT1S12N60C3  
HGT1S12N60C3S  
TO-262AA  
TO-263AB  
S12N60C3  
S12N60C3  
Terminal Diagram  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in Tape and Reel, i.e.,  
HGT1S12N60C3S9A.  
N-CHANNEL ENHANCEMENT MODE  
C
Formerly Developmental Type TA49123.  
G
E
Packaging  
JEDEC TO-220AB  
JEDEC TO-262AA  
EMITTER  
COLLECTOR  
GATE  
EMITTER  
COLLECTOR  
GATE  
COLLECTOR  
(FLANGE)  
COLLECTOR  
(FLANGE)  
JEDEC TO-263AB  
M
A
COLLECTOR  
(FLANGE)  
GATE  
EMITTER  
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:  
4,364,073  
4,587,713  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,417,385  
4,598,461  
4,644,637  
4,801,986  
4,883,767  
4,430,792  
4,605,948  
4,682,195  
4,803,533  
4,888,627  
4,443,931  
4,618,872  
4,684,413  
4,809,045  
4,890,143  
4,466,176  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,516,143  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,532,534  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,567,641  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 4040.3  
Copyright © Harris Corporation 1997  
3-29  
123456

中文翻译

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HGTP12N60C3R FAIRCHILD

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 		Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB

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