是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | not_compliant |
风险等级: | 5.11 | Is Samacsys: | N |
其他特性: | LOW CONDUCTION LOSS, ULTRA FAST | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 24 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 最大降落时间(tf): | 275000000000 ns |
门极发射器阈值电压最大值: | 6 V | 门极-发射极最大电压: | 20 V |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 104 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 540 ns |
标称接通时间 (ton): | 74 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HGTP12N60C3_NL | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, | |
HGTP12N60C3D | INTERSIL |
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24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | |
HGTP12N60C3D | FAIRCHILD |
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24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | |
HGTP12N60C3D | ONSEMI |
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600V, UFS IGBT | |
HGTP12N60C3D_NL | FAIRCHILD |
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Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE | |
HGTP12N60C3DR | FAIRCHILD |
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Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB | |
HGTP12N60C3DR | RENESAS |
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24A, 600V, N-CHANNEL IGBT | |
HGTP12N60C3R | ROCHESTER |
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24A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3 | |
HGTP12N60C3R | RENESAS |
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24A, 600V, N-CHANNEL IGBT, TO-220AB | |
HGTP12N60C3R | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB |