Datasheet > HGTP12N60C3

HGTP12N60C3

更新时间： 2024-11-06 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
6页	122K
描述
24A, 600V, UFS Series N-Channel IGBTs

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HGTP12N60C3 数据手册

HGTP12N60C3, HGT1S12N60C3S

Data Sheet

January 2000

File Number 4040.4

24A, 600V, UFS Series N-Channel IGBTs

Features

The HGTP12N60C3 and HGT1S12N60C3S are MOS gated

high voltage switching devices combining the best features

of MOSFETs and bipolar transistors. These devices have

the high input impedance of a MOSFET and the low on-state

conduction loss of a bipolar transistor. The much lower

• 24A, 600V at T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

on-state voltage drop varies only moderately between 25 C

and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC TO-220AB

EMITTER

COLLECTOR

GATE

Formerly Developmental Type TA49123.

COLLECTOR

(FLANGE)

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

P12N60C3

S12N60C3

HGTP12N60C3

HGT1S12N60C3S

JEDEC TO-263AB

COLLECTOR

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in Tape and Reel, i.e.,

HGT1S12N60C3S9A.

(FLANGE)

GATE

Symbol

EMITTER

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6

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与HGTP12N60C3相关器件

型号	品牌	获取价格	描述	数据表
HGTP12N60C3_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB,
HGTP12N60C3D	INTERSIL	获取价格	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP12N60C3D	FAIRCHILD	获取价格	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP12N60C3D	ONSEMI	获取价格	600V, UFS IGBT
HGTP12N60C3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE
HGTP12N60C3DR	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB
HGTP12N60C3DR	RENESAS	获取价格	24A, 600V, N-CHANNEL IGBT
HGTP12N60C3R	ROCHESTER	获取价格	24A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3
HGTP12N60C3R	RENESAS	获取价格	24A, 600V, N-CHANNEL IGBT, TO-220AB
HGTP12N60C3R	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB

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