Datasheet > HGTP12N60B3D

HGTP12N60B3D

更新时间： 2024-11-24 22:32:55

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
7页	120K
描述
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

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HGTP12N60B3D 数据手册

HGTG12N60B3D, HGTP12N60B3D,

HGT1S12N60B3DS

Data Sheet

January 2000

File Number 4411.2

27A, 600V, UFS Series N-Channel IGBTs

with Anti-Parallel Hyperfast Diode

Features

• 27A, 600V, T = 25 C

This family of MOS gated high voltage switching devices

combine the best features of MOSFETs and bipolar

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T = 150 C

transistors. These devices have the high input impedance of

a MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

• Related Literature

moderately between 25 C and 150 C. The IGBT used is the

development type TA49171. The diode used in anti-parallel

with the IGBT is the development type TA49188.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

Formerly developmental type TA49173.

COLLECTOR

(FLANGE)

Ordering Information

PART NUMBER

HGTP12N60B3D

HGTG12N60B3D

HGT1S12N60B3DS

PACKAGE

BRAND

12N60B3D

TO-220AB

TO-247

12N60B3D

JEDEC TO-263AB

TO-263AB

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in tape and reel, e.g.

HGT1S12N60B3DS9A.

COLLECTOR

(FLANGE)

Symbol

JEDEC STYLE TO-247

COLLECTOR

(BOTTOM SIDE METAL)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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与HGTP12N60B3D相关器件

型号	品牌	获取价格	描述	数据表
HGTP12N60C3	HARRIS	获取价格	24A, 600V, UFS Series N-Channel IGBTs
HGTP12N60C3	FAIRCHILD	获取价格	24A, 600V, UFS Series N-Channel IGBTs
HGTP12N60C3	INTERSIL	获取价格	24A, 600V, UFS Series N-Channel IGBTs
HGTP12N60C3	RENESAS	获取价格	24A, 600V, N-CHANNEL IGBT, TO-220AB
HGTP12N60C3_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB,
HGTP12N60C3D	INTERSIL	获取价格	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP12N60C3D	FAIRCHILD	获取价格	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP12N60C3D	ONSEMI	获取价格	600V, UFS IGBT
HGTP12N60C3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE
HGTP12N60C3DR	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB

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