Datasheet > HGTP12N60B3D

HGTP12N60B3D

更新时间： 2024-09-16 22:32:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体二极管晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
8页	126K
描述
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

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HGTP12N60B3D 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.08	其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	27 A
集电极-发射极最大电压：	600 V	配置：	SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）：	175 ns	门极发射器阈值电压最大值：	6 V
门极-发射极最大电压：	20 V	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	104 W
认证状态：	Not Qualified	子类别：	Insulated Gate BIP Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	392 ns
标称接通时间 (ton)：	45 ns	Base Number Matches：	1

HGTP12N60B3D 数据手册

HGTG12N60C3D

Data Sheet

December 2001

24A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Features

• 24A, 600V at T = 25 C

The HGTG12N60C3D is a MOS gated high voltage switching

device combining the best features of MOSFETs and bipolar

transistors. The device has the high input impedance of a

MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

moderately between 25 C and 150 C.The IGBT used is the

development type TA49123. The diode used in anti parallel

with the IGBT is the development type TA49061.

• Typical Fall Time. . . . . . . . . . . . . . . . 210ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential.

Formerly Developmental Type TA49117.

Ordering Information

PART NUMBER

PACKAGE

BRAND

G12N60C3D

HGTG12N60C3D

TO-247

NOTE: When ordering, use the entire part number.

Symbol

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG12N60C3D Rev. B

12 3 4 5 6 7 8

中文翻译

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与HGTP12N60B3D相关器件

型号	品牌	获取价格	描述	数据表
HGTP12N60C3	HARRIS	获取价格	24A, 600V, UFS Series N-Channel IGBTs
HGTP12N60C3	FAIRCHILD	获取价格	24A, 600V, UFS Series N-Channel IGBTs
HGTP12N60C3	INTERSIL	获取价格	24A, 600V, UFS Series N-Channel IGBTs
HGTP12N60C3	RENESAS	获取价格	24A, 600V, N-CHANNEL IGBT, TO-220AB
HGTP12N60C3_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB,
HGTP12N60C3D	INTERSIL	获取价格	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP12N60C3D	FAIRCHILD	获取价格	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGTP12N60C3D	ONSEMI	获取价格	600V, UFS IGBT
HGTP12N60C3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE
HGTP12N60C3DR	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB

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