是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | 风险等级: | 5.92 |
最大集电极电流 (IC): | 20 A | 集电极-发射极最大电压: | 500 V |
最大降落时间(tf): | 1000 ns | 门极发射器阈值电压最大值: | 4.5 V |
门极-发射极最大电压: | 20 V | JESD-609代码: | e0 |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 100 W | 最大上升时间(tr): | 50 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HGTM24N60D1 | RENESAS |
获取价格 |
TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,40A I(C),TO-204AA | |
HGTP10N120B3 | RENESAS |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, TO-220AB | |
HGTP10N120B3D | RENESAS |
获取价格 |
1200V, N-CHANNEL IGBT, TO-220AB | |
HGTP10N120BN | INTERSIL |
获取价格 |
35A, 1200V, NPT Series N-Channel IGBT | |
HGTP10N120BN | ONSEMI |
获取价格 |
1200V,NPT IGBT | |
HGTP10N120BN | FAIRCHILD |
获取价格 |
35A, 1200V, NPT Series N-Channel IGBT | |
HGTP10N40C1 | INTERSIL |
获取价格 |
10A, 12A, 400V and 500V N-Channel IGBTs | |
HGTP10N40C1D | INTERSIL |
获取价格 |
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | |
HGTP10N40E1 | INTERSIL |
获取价格 |
10A, 12A, 400V and 500V N-Channel IGBTs | |
HGTP10N40E1D | INTERSIL |
获取价格 |
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |