Datasheet > HGTP10N50C1D

HGTP10N50C1D

更新时间： 2024-11-06 22:32:55

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管晶体管功率控制双极性晶体管栅局域网
页数	文件大小	规格书
6页	40K
描述
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

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HGTP10N50C1D 数据手册

HGTP10N40C1D, HGTP10N40E1D,

HGTP10N50C1D, HGTP10N50E1D

10A, 400V and 500V N-Channel IGBTs

with Anti-Parallel Ultrafast Diodes

April 1995

Features

Package

JEDEC TO-220AB

• 10A, 400V and 500V

• V_CE(ON): 2.5V Max.

• T_FALL: 1µs, 0.5µs

EMITTER

COLLECTOR

GATE

• Low On-State Voltage

• Fast Switching Speeds

• High Input Impedance

• Anti-Parallel Diode

COLLECTOR

(FLANGE)

Applications

• Power Supplies

• Motor Drives

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

• Protective Circuits

Description

The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D,

and HGTP10N50E1D are n-channel enhancement-mode

insulated gate bipolar transistors (IGBTs) designed for high

voltage, low on-dissipation applications such as switching reg-

ulators and motor drivers. They feature a discrete anti-parallel

diode that shunts current around the IGBT in the reverse

direction without introducing carriers into the depletion region.

These types can be operated directly from low power inte-

grated circuits.

PACKAGING AVAILABILITY

PART NUMBER

HGTP10N40C1D

HGTP10N40E1D

HGTP10N50C1D

HGTP10N50E1D

PACKAGE

TO-220AB

BRAND

10N40C1D

10N40E1D

10N50C1D

10N50E1D

NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings T = +25 C, Unless Otherwise Speciﬁed

HGTP10N40C1D

HGTP10N50C1D

HGTP10N40E1D

HGTP10N50E1D

UNITS

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

400

500

CES

Collector-Gate Voltage R = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

CGR

Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

±20

C25

C90

Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . I

17.5

at T = +90 C . . . . . . . . . . . . . . . . . . . . . . . . . I

Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.6

W/ C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T , T

-55 to +150

STG

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 2405.5

3-20

12 3 4 5 6

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与HGTP10N50C1D相关器件

型号	品牌	获取价格	描述	数据表
HGTP10N50E1	INTERSIL	获取价格	10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N50E1D	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10N50F1D	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP11N120CN	FAIRCHILD	获取价格	43A, 1200V, NPT Series N-Channel IGBT
HGTP11N120CN	INTERSIL	获取价格	43A, 1200V, NPT Series N-Channel IGBT
HGTP11N120CN	RENESAS	获取价格	43A, 1200V, N-CHANNEL IGBT, TO-220AB
HGTP11N120CN96	RENESAS	获取价格	43A, 1200V, N-CHANNEL IGBT, TO-220AB ALTERNATE VERSION, 3 PIN
HGTP11N120CN9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB
HGTP12N60A4	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBTs
HGTP12N60A4	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT

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