Datasheet > HGTP12N60A4

HGTP12N60A4

更新时间： 2024-11-06 22:32:55

品牌	Logo	应用领域
英特矽尔 - INTERSIL		开关双极性晶体管
页数	文件大小	规格书
10页	118K
描述
600V, SMPS Series N-Channel IGBT

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HGTP12N60A4 数据手册

HGTP12N60A4, HGTG12N60A4,

HGT1S12N60A4S

Data Sheet

May 1999

File Number 4656.2

600V, SMPS Series N-Channel IGBT

Features

The HGTP12N60A4, HGTG12N60A4 and

• >100kHz Operation at 390V, 12A

• 200kHz Operation at 390V, 9A

• 600V Switching SOA Capability

HGT1S12N60A4S are MOS gated high voltage switching

devices combining the best features of MOSFETs and

bipolar transistors. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C

• Low Conduction Loss

drop varies only moderately between 25 C and 150 C.

• Temperature Compensating SABER Model

http://www.intersil.com

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power supplies.

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Formerly Developmental Type TA49335.

Packaging

Ordering Information

JEDEC TO-220AB ALTERNATE VERSION

PART NUMBER

PACKAGE

BRAND

12N60A4

HGTP12N60A4

TO-220AB

COLLECTOR

(FLANGE)

HGTG12N60A4

TO-247

12N60A4

HGT1S12N60A4S

TO-263AB

NOTE: When ordering, use the entire part number. Add the sufﬁx

9A to obtain the TO-263AB variant in tape and reel, e.g.

HGT1S12N60A4S9A

JEDEC TO-263AB

Symbol

COLLECTOR

(FLANGE)

JEDEC STYLE TO-247

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,587,713

4,641,162

4,794,432

4,860,080

4,969,027

4,417,385

4,598,461

4,644,637

4,801,986

4,883,767

4,430,792

4,605,948

4,682,195

4,803,533

4,888,627

4,443,931

4,618,872

4,684,413

4,809,045

4,890,143

4,466,176

4,620,211

4,694,313

4,809,047

4,901,127

4,516,143

4,631,564

4,717,679

4,810,665

4,904,609

4,532,534

4,639,754

4,743,952

4,823,176

4,933,740

4,567,641

4,639,762

4,783,690

4,837,606

4,963,951

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5 6 7...10

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与HGTP12N60A4相关器件

型号	品牌	获取价格	描述	数据表
HGTP12N60A4_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE
HGTP12N60A4D	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP12N60A4D	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP12N60A4D	ROCHESTER	获取价格	54A, 600V, N-CHANNEL IGBT, TO-220AB ALTERNATE VERSION, 3 PIN
HGTP12N60A4D	ONSEMI	获取价格	600V，SMPS IGBT
HGTP12N60A4D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB ALTERNATE
HGTP12N60B3	INTERSIL	获取价格	27A, 600V, UFS Series N-Channel IGBTs
HGTP12N60B3D	FAIRCHILD	获取价格	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTP12N60B3D	INTERSIL	获取价格	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGTP12N60C3	HARRIS	获取价格	24A, 600V, UFS Series N-Channel IGBTs

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