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HGTP10N50E1

更新时间： 2024-09-16 22:32:55
品牌 Logo 应用领域
英特矽尔 - INTERSIL 双极性晶体管
页数 文件大小 规格书
7页 42K
描述
10A, 12A, 400V and 500V N-Channel IGBTs

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HGTP10N50E1 数据手册

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HGTP10N40C1, 40E1, 50C1, 50E1,  
HGTH12N40C1, 40E1, 50C1, 50E1  
10A, 12A,  
400V and 500V N-Channel IGBTs  
April 1995  
Features  
Packages  
HGTH-TYPES JEDEC TO-218AC  
• 10A and 12A, 400V and 500V  
• VCE(ON): 2.5V Max.  
EMITTER  
COLLECTOR  
• TFI: 1µs, 0.5µs  
GATE  
COLLECTOR  
(FLANGE)  
• Low On-State Voltage  
• Fast Switching Speeds  
• High Input Impedance  
• No Anti-Parallel Diode  
Applications  
HGTP-TYPES JEDEC TO-220AB  
• Power Supplies  
• Motor Drives  
EMITTER  
COLLECTOR  
COLLECTOR  
GATE  
(FLANGE)  
• Protection Circuits  
Description  
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1,  
HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1  
are n-channel enhancement-mode insulated gate bipolar transistors  
(IGBTs) designed for high-voltage, low on-dissipation applications such as  
switching regulators and motor drivers. These types can be operated  
directly from low-power integrated circuits.  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
C
PACKAGING AVAILABILITY  
PART NUMBER  
HGTH12N40C1  
HGTH12N40E1  
HGTH12N50C1  
HGTH12N50E1  
HGTP10N40C1  
HGTP10N40E1  
HGTP10N50C1  
HGTP10N50E1  
PACKAGE  
TO-218AC  
BRAND  
G12N40C1  
G
TO-218AC  
TO-218AC  
TO-218AC  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
G12N40E1  
G12N50C1  
G12N50E1  
G10N40C1  
G10N40E1  
G10N50C1  
G10N50E1  
E
NOTE: When ordering, use the entire part number.  
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
HGTH12N40C1 HGTH12N50C1 HGTP10N40C1 HGTP10N50C1  
HGTH12N40E1 HGTH12N50E1 HGTP10N40E1 HGTP10N50E1 UNITS  
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES  
Collector-Gate Voltage RGE = 1MΩ. . . . . . . . . . . . . . . . VCGR  
Reverse Collector-Emitter Voltage . . . . . . . . . . . . VECS(rev.)  
Gate-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE  
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC  
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM  
Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD  
Power Dissipation Derating Above TC > +25oC . . . . . . . . . . .  
400  
400  
15  
500  
500  
400  
400  
500  
500  
V
V
15  
-5  
-5  
V
±20  
12  
±20  
±20  
±20  
V
12  
10  
10  
A
17.5  
75  
17.5  
75  
17.5  
60  
17.5  
60  
A
W
0.6  
0.6  
0.48  
-55 to +150  
0.48  
-55 to +150  
W/oC  
oC  
Operating and Storage Junction Temperature Range . . . TJ, TSTG -55 to +150  
-55 to +150  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 1697.3  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
3-15  
1234567

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