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HGTP11N120CN9A PDF预览

HGTP11N120CN9A

更新时间： 2024-09-17 14:50:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网电动机控制栅晶体管
页数 文件大小 规格书
8页 227K
描述
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN

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HGTP11N120CN9A 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknown风险等级：5.73
Is Samacsys：N其他特性：AVALANCHE RATED
外壳连接：COLLECTOR最大集电极电流 (IC)：43 A
集电极-发射极最大电压：1200 V配置：SINGLE
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：550 ns
标称接通时间 (ton)：33 nsBase Number Matches：1

HGTP11N120CN9A 数据手册

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HGTG11N120CN, HGTP11N120CN,  
HGT1S11N120CNS  
Data Sheet  
December 2001  
43A, 1200V, NPT Series N-Channel IGBT  
Features  
o
The HGTG11N120CN, HGTP11N120CN, and  
• 43A, 1200V, T = 25 C  
C
HGT1S11N120CNS are Non-Punch Through (NPT) IGBT  
designs. They are new members of the MOS gated high  
voltage switching IGBT family. IGBTs combine the best  
features of MOSFETs and bipolar transistors. This device  
has the high input impedance of a MOSFET and the low on-  
state conduction loss of a bipolar transistor.  
• 1200V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Avalanche Rated  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
• Thermal Impedance SPICE Model  
Temperature Compensating SABER™ Model  
www.fairchildsemi.com  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly Developmental Type TA49291.  
Ordering Information  
Packaging  
PART NUMBER  
HGTG11N120CN  
HGTP11N120CN  
HGT1S11N120CNS  
PACKAGE  
BRAND  
G11N120CN  
JEDEC STYLE TO-247  
E
C
TO-247  
COLLECTOR  
(BOTTOM SIDE  
METAL)  
G
TO-220AB  
TO-263AB  
11N120CN  
11N120CN  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in Tape and Reel, i.e.,  
HGT1S11N120CNS9A.  
Symbol  
JEDEC TO-220AB (ALTERNATE VERSION)  
C
COLLECTOR  
(FLANGE)  
E
G
C
G
E
JEDEC TO-263AB  
COLLECTOR  
(FLANGE)  
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B  
12345678

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