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HGTP10N120BN PDF预览

HGTP10N120BN

更新时间: 2024-11-08 11:11:19
品牌 Logo 应用领域
安森美 - ONSEMI 局域网电动机控制瞄准线双极性晶体管
页数 文件大小 规格书
10页 296K
描述
1200V,NPT IGBT

HGTP10N120BN 技术参数

是否无铅: 不含铅生命周期:Not Recommended
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:8 weeks风险等级:5.21
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):35 A集电极-发射极最大电压:1200 V
配置:SINGLEJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):330 ns
标称接通时间 (ton):32 nsBase Number Matches:1

HGTP10N120BN 数据手册

 浏览型号HGTP10N120BN的Datasheet PDF文件第2页浏览型号HGTP10N120BN的Datasheet PDF文件第3页浏览型号HGTP10N120BN的Datasheet PDF文件第4页浏览型号HGTP10N120BN的Datasheet PDF文件第5页浏览型号HGTP10N120BN的Datasheet PDF文件第6页浏览型号HGTP10N120BN的Datasheet PDF文件第7页 
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HGTP10N120BN 替代型号

型号 品牌 替代类型 描述 数据表
HGTP20N60A4 ONSEMI

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600V,SMPS IGBT

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