Datasheet > HGTP10N120BN

HGTP10N120BN

更新时间： 2024-11-26 11:11:19

品牌	Logo	应用领域
安森美 - ONSEMI		局域网电动机控制瞄准线双极性晶体管
页数	文件大小	规格书
10页	296K
描述
1200V，NPT IGBT

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技术参数
数据手册
替代型号

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HGTP10N120BN 技术参数

是否无铅：	不含铅	生命周期：	Not Recommended
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	8 weeks	风险等级：	5.21
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	35 A	集电极-发射极最大电压：	1200 V
配置：	SINGLE	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	Tin (Sn)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	330 ns
标称接通时间 (ton)：	32 ns	Base Number Matches：	1

HGTP10N120BN 数据手册

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HGTP10N120BN 替代型号

型号	品牌	替代类型	描述	数据表
HGTP20N60A4	ONSEMI	类似代替	600V，SMPS IGBT

与HGTP10N120BN相关器件

型号	品牌	获取价格	描述	数据表
HGTP10N40C1	INTERSIL	获取价格	10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N40C1D	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10N40E1	INTERSIL	获取价格	10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N40E1D	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10N40E1D	RENESAS	获取价格	TRANSISTOR,IGBT,N-CHAN+DIODE,400V V(BR)CES,17.5A I(C),TO-220AB
HGTP10N40F1D	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10N50C1	INTERSIL	获取价格	10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N50C1D	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10N50E1	INTERSIL	获取价格	10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N50E1D	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

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