5秒后页面跳转
捷配首页

Datasheet > HGTP10N40F1D
HGTP10N40F1D PDF预览

HGTP10N40F1D

更新时间： 2024-09-16 22:32:55
品牌 Logo 应用领域
英特矽尔 - INTERSIL 二极管双极性晶体管
页数 文件大小 规格书
5页 37K
描述
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

阅读下载

中文翻译

获取价格

HGTP10N40F1D 数据手册

 浏览型号HGTP10N40F1D的Datasheet PDF文件第2页浏览型号HGTP10N40F1D的Datasheet PDF文件第3页浏览型号HGTP10N40F1D的Datasheet PDF文件第4页浏览型号HGTP10N40F1D的Datasheet PDF文件第5页 
HGTP10N40F1D,  
HGTP10N50F1D  
10A, 400V and 500V N-Channel IGBTs  
with Anti-Parallel Ultrafast Diodes  
April 1995  
Features  
Package  
JEDEC TO-220AB  
• 10A, 400V and 500V  
• Latch Free Operation  
• Typical Fall Time < 1.4µs  
• High Input Impedance  
• Low Conduction Loss  
• Anti-Parallel Diode  
• tRR < 60ns  
EMITTER  
COLLECTOR  
GATE  
COLLECTOR  
(FLANGE)  
Description  
The IGBT is a MOS gated high voltage switching device combin-  
ing the best features of MOSFETs and bipolar transistors. The  
device has the high input impedance of a MOSFET and the low  
on-state conduction loss of a bipolar transistor. The much lower  
on-state voltage drop varies only moderately between +25oC  
and +150oC. The diode used in parallel with the IGBT is an  
ultrafast (tRR < 60ns) with soft recovery characteristic.  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
C
IGBTs are ideal for many high voltage switching applications  
operating at frequencies where low conduction losses are  
essential, such as: AC and DC motor controls, power  
supplies and drivers for solenoids, relays and contactors.  
G
E
PACKAGING AVAILABILITY  
PART NUMBER  
HGTP10N40F1D  
HGTP10N50F1D  
PACKAGE  
TO-220AB  
TO-220AB  
BRAND  
10N40F1D  
10N50F1D  
NOTE: When ordering, use the entire part number  
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
HGTP10N40F1D  
HGTP10N50F1D  
UNITS  
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
400  
400  
12  
10  
12  
±20  
16  
10  
75  
500  
500  
12  
10  
12  
±20  
16  
10  
75  
V
V
A
A
A
V
A
A
W
CES  
CGR  
Collector-Gate Voltage R = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV  
GE  
o
Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
C25  
C90  
o
at T = +90 C . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
CM  
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
GES  
o
Diode Forward Current at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
F25  
F90  
o
at T = +90 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
o
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
C
D
o
o
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
0.6  
-55 to +150  
260  
0.6  
-55 to +150  
260  
W/ C  
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T , T  
C
C
J
STG  
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
L
NOTE:  
o
1. T = +150 C, Min. R = 25Ω without latch.  
J
GE  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:  
4,364,073  
4,587,713  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,417,385  
4,598,461  
4,644,637  
4,801,986  
4,883,767  
4,430,792  
4,605,948  
4,682,195  
4,803,533  
4,888,627  
4,443,931  
4,618,872  
4,684,413  
4,809,045  
4,890,143  
4,466,176  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,516,143  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,532,534  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,567,641  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 2751.2  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
3-25  
12345

中文翻译

下载PDF

与HGTP10N40F1D相关器件

型号 品牌 获取价格 描述 数据表
HGTP10N50C1 INTERSIL

获取价格

 		10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N50C1D INTERSIL

获取价格

 		10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10N50E1 INTERSIL

获取价格

 		10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N50E1D INTERSIL

获取价格

 		10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10N50F1D INTERSIL

获取价格

 		10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP11N120CN FAIRCHILD

获取价格

 		43A, 1200V, NPT Series N-Channel IGBT
HGTP11N120CN INTERSIL

获取价格

 		43A, 1200V, NPT Series N-Channel IGBT
HGTP11N120CN RENESAS

获取价格

 		43A, 1200V, N-CHANNEL IGBT, TO-220AB
HGTP11N120CN96 RENESAS

获取价格

 		43A, 1200V, N-CHANNEL IGBT, TO-220AB ALTERNATE VERSION, 3 PIN
HGTP11N120CN9A FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB

与HGTP10N40F1D相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证