5秒后页面跳转
HGTP10N120BN PDF预览

HGTP10N120BN

更新时间: 2024-09-16 22:32:55
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管电动机控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
7页 84K
描述
35A, 1200V, NPT Series N-Channel IGBT

HGTP10N120BN 数据手册

 浏览型号HGTP10N120BN的Datasheet PDF文件第2页浏览型号HGTP10N120BN的Datasheet PDF文件第3页浏览型号HGTP10N120BN的Datasheet PDF文件第4页浏览型号HGTP10N120BN的Datasheet PDF文件第5页浏览型号HGTP10N120BN的Datasheet PDF文件第6页浏览型号HGTP10N120BN的Datasheet PDF文件第7页 
HGTG10N120BN, HGTP10N120BN,  
HGT1S10N120BNS  
Data Sheet  
January 2000  
File Number 4575.2  
35A, 1200V, NPT Series N-Channel IGBT  
Features  
o
The HGTG10N120BN, HGTP10N120BN and  
• 35A, 1200V, T = 25 C  
C
HGT1S10N120BNS are Non-Punch Through (NPT) IGBT  
designs. They are new members of the MOS gated high  
voltage switching IGBT family. IGBTs combine the best  
features of MOSFETs and bipolar transistors. This device  
has the high input impedance of a MOSFET and the low on-  
state conduction loss of a bipolar transistor.  
• 1200V Switching SOA Capability  
o
Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Avalanche Rated  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
Thermal Impedance SPICE Model  
Temperature Compensating SABER™ Model  
www.intersil.com  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards  
Formerly Developmental Type TA49290.  
Ordering Information  
Packaging  
PART NUMBER  
HGTG10N120BN  
HGTP10N120BN  
HGT1S10N120BNS  
PACKAGE  
BRAND  
G10N120BN  
JEDEC STYLE TO-247  
TO-247  
E
C
TO-220AB  
T0-263AB  
10N120BN  
10N120BN  
COLLECTOR  
(FLANGE)  
G
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in tape and reel, e.g.  
HGT1S10N120BNS9A.  
Symbol  
C
JEDEC TO-220AB (ALTERNATE VERSION)  
E
C
G
G
COLLECTOR  
(FLANGE)  
E
JEDEC TO-263AB  
COLLECTOR  
(FLANGE)  
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
SABER™ is a trademark of Analogy, Inc.  
1

HGTP10N120BN 替代型号

型号 品牌 替代类型 描述 数据表
IRG4PC50WPBF INFINEON

功能相似

INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40UDPBF INFINEON

功能相似

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF INFINEON

功能相似

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTP10N120BN相关器件

型号 品牌 获取价格 描述 数据表
HGTP10N40C1 INTERSIL

获取价格

10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N40C1D INTERSIL

获取价格

10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10N40E1 INTERSIL

获取价格

10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N40E1D INTERSIL

获取价格

10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10N40E1D RENESAS

获取价格

TRANSISTOR,IGBT,N-CHAN+DIODE,400V V(BR)CES,17.5A I(C),TO-220AB
HGTP10N40F1D INTERSIL

获取价格

10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10N50C1 INTERSIL

获取价格

10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N50C1D INTERSIL

获取价格

10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10N50E1 INTERSIL

获取价格

10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N50E1D INTERSIL

获取价格

10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes