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HGTP10N120B3 PDF预览

HGTP10N120B3

更新时间: 2024-09-18 07:30:35
品牌 Logo 应用领域
瑞萨 - RENESAS
页数 文件大小 规格书
1页 22K
描述
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, TO-220AB

HGTP10N120B3 数据手册

  

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