Datasheet > HGTG7N60A4D

HGTG7N60A4D

更新时间： 2024-11-26 11:14:23

品牌	Logo	应用领域
安森美 - ONSEMI		局域网栅瞄准线双极性晶体管功率控制
页数	文件大小	规格书
14页	599K
描述
600V, SMPS IGBT

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HGTG7N60A4D 技术参数

是否无铅：	不含铅	生命周期：	Not Recommended
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	5.23
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	34 A	集电极-发射极最大电压：	600 V
配置：	SINGLE WITH BUILT-IN DIODE	JEDEC-95代码：	TO-247
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	POWER CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	205 ns	标称接通时间 (ton)：	17 ns
Base Number Matches：	1

HGTG7N60A4D 数据手册

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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

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与HGTG7N60A4D相关器件

型号	品牌	获取价格	描述	数据表
HGTG7N60A4D_05	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTH12N40C1	INTERSIL	获取价格	10A, 12A, 400V and 500V N-Channel IGBTs
HGTH12N40C1D	RENESAS	获取价格	TRANSISTOR,IGBT,N-CHAN+DIODE,400V V(BR)CES,12A I(C),TO-218AC
HGTH12N40E1	INTERSIL	获取价格	10A, 12A, 400V and 500V N-Channel IGBTs
HGTH12N40E1D	RENESAS	获取价格	TRANSISTOR,IGBT,N-CHAN+DIODE,400V V(BR)CES,12A I(C),TO-218AC
HGTH12N50C1	INTERSIL	获取价格	10A, 12A, 400V and 500V N-Channel IGBTs
HGTH12N50C1D	RENESAS	获取价格	Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-218AC
HGTH12N50E1	INTERSIL	获取价格	10A, 12A, 400V and 500V N-Channel IGBTs
HGTH12N50E1D	RENESAS	获取价格	TRANSISTOR,IGBT,N-CHAN+DIODE,500V V(BR)CES,12A I(C),TO-218AC
HGTH20N40C1	INTERSIL	获取价格	15A, 20A, 400V and 500V N-Channel IGBTs

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