Datasheet > HGTG40N60B3

HGTG40N60B3

更新时间： 2024-11-06 22:19:47

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管功率控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
7页	79K
描述
70A, 600V, UFS Series N-Channel IGBT

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中文翻译

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数据手册
替代型号

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HGTG40N60B3 数据手册

HGTG40N60B3

Data Sheet

January 2000

File Number 3943.3

70A, 600V, UFS Series N-Channel IGBT

Features

The HGTG40N60B3 is a MOS gated high voltage switching

device combining the best features of MOSFETs and bipolar

transistors. The device has the high input impedance of a

MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

• 70A, 600V, T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

moderately between 25 C and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC STYLE TO-247

Formerly Developmental Type TA49052.

Ordering Information

PART NUMBER

PACKAGE

BRAND

G40N60B3

HGTG40N60B3

TO-247

COLLECTOR

(FLANGE)

NOTE: When ordering, use the entire part number.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

中文翻译

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HGTG40N60B3 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PF50WDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTG40N60B3相关器件

型号	品牌	获取价格	描述	数据表
HGTG40N60B3_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 P
HGTG40N60C3	INTERSIL	获取价格	75A, 600V, UFS Series N-Channel IGBT
HGTG40N60C3	FAIRCHILD	获取价格	75A, 600V, UFS Series N-Channel IGBT
HGTG40N60C3R	RENESAS	获取价格	75A, 600V, N-CHANNEL IGBT, TO-247
HGTG40N60C3R	ROCHESTER	获取价格	75A, 600V, N-CHANNEL IGBT, TO-247
HGTG5N120BND	FAIRCHILD	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTG5N120BND	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTG5N120BND	RENESAS	获取价格	21A, 1200V, N-CHANNEL IGBT, TO-247
HGTG5N120BND	ONSEMI	获取价格	1200V，NPT IGBT
HGTG5N120BND_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3

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