Datasheet > HGTG40N60C3

HGTG40N60C3

更新时间： 2024-09-16 22:19:47

品牌	Logo	应用领域
英特矽尔 - INTERSIL		双极性晶体管
页数	文件大小	规格书
7页	82K
描述
75A, 600V, UFS Series N-Channel IGBT

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HGTG40N60C3 数据手册

HGTG40N60C3

Data Sheet

January 2000

File Number 4472.2

75A, 600V, UFS Series N-Channel IGBT

Features

The HGTG40N60C3 is a MOS gated high voltage switching

device combining the best features of a MOSFET and a

bipolar transistor. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

• 75A, 600V, T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

drop varies only moderately between 25 C and 150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC STYLE TO-247

Formerly developmental type TA49273.

Ordering Information

PART NUMBER

PACKAGE

PKG. NO.

HGTG40N60C3

TO-247

G40N60C3

NOTE: When ordering, use the entire part number.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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