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HGTG34N100E2

更新时间： 2024-09-16 22:13:27
品牌 Logo 应用领域
英特矽尔 - INTERSIL 双极性晶体管
页数 文件大小 规格书
5页 42K
描述
34A, 1000V N-Channel IGBT

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HGTG34N100E2 数据手册

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HGTG34N100E2  
34A, 1000V N-Channel IGBT  
April 1995  
Features  
Package  
JEDEC STYLE TO-247  
• 34A, 1000V  
EMITTER  
• Latch Free Operation  
• Typical Fall Time - 710ns  
• High Input Impedance  
• Low Conduction Loss  
COLLECTOR  
COLLECTOR  
(BOTTOM SIDE  
METAL)  
GATE  
Description  
The HGTG34N100E2 is a MOS gated high voltage switching  
device combining the best features of MOSFETs and bipolar  
transistors. The device has the high input impedance of a MOS-  
FET and the low on-state conduction loss of a bipolar transistor.  
The much lower on-state voltage drop varies only moderately  
between +25oC and +150oC.  
Terminal Diagram  
N-CHANNEL ENHANCEMENT MODE  
The IGBTs are ideal for many high voltage switching applications  
operating at moderate frequencies where low conduction losses  
are essential, such as: AC and DC motor controls, power sup-  
plies and drivers for solenoids, relays and contactors.  
C
PACKAGING AVAILABILITY  
PART NUMBER  
PACKAGE  
TO-247  
BRAND  
G
HGTG34N100E2  
G34N100E2  
NOTE: When ordering, use the entire part number.  
Formerly Developmental Type TA9895.  
E
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
HGTG34N100E2  
UNITS  
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV  
1000  
1000  
55  
V
V
A
A
A
V
V
-
CES  
Collector-Gate Voltage, R =1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
GE  
CGR  
o
Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
C25  
o
at V = 15V, at T = +90 C . . . . . . . . . . . . . . . . . . . I  
34  
GE  
C
C90  
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
200  
±20  
±30  
CM  
GES  
GEM  
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
o
Switching Safe Operating Area at T = +150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA  
200A at 0.8 BV  
J
o
CES  
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
208  
W
C
D
o
o
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
1.67  
W/ C  
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T , T  
-55 to +150  
C
J
STG  
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
260  
3
C
L
SC  
SC  
Short Circuit Withstand Time (Note 2) at V = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t  
µs  
µs  
GE  
at V = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t  
10  
GE  
NOTE:  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
o
2. V  
= 600V, T = +125 C, R = 25Ω.  
CE(PEAK)  
C
GE  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:  
4,364,073  
4,417,385  
4,598,461  
4,644,637  
4,801,986  
4,883,767  
4,430,792  
4,605,948  
4,682,195  
4,803,533  
4,888,627  
4,443,931  
4,618,872  
4,684,413  
4,809,045  
4,890,143  
4,466,176  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,516,143  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,532,534  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,567,641  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,587,713  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 2827.3  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19939-124  
12345

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