Datasheet > HGTG30N60C3D

HGTG30N60C3D

更新时间： 2024-11-06 22:51:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体二极管晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
7页	120K
描述
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

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HGTG30N60C3D 数据手册

HGTG30N60C3D

Data Sheet

January 2000

File Number 4041.2

63A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diodes

Features

• 63A, 600V at T = 25 C

The HGTG30N60C3D is a MOS gated high voltage

switching device combining the best features of MOSFETs

and bipolar transistors. The device has the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

drop varies only moderately between 25 C and 150 C. The

IGBT used is the development type TA49051. The diode

used in anti-parallel with the IGBT is the development type

TA49053.

• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction

losses are essential.

Formerly Developmental Type TA49014.

Ordering Information

PART NUMBER

PACKAGE

BRAND

G30N60C3D

HGTG30N60C3D

TO-247

NOTE: When ordering, use the entire part number.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

中文翻译

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HGTG30N60C3D 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50WPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与HGTG30N60C3D相关器件

型号	品牌	获取价格	描述	数据表
HGTG30N60C3D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
HGTG30N60C3D_NL	ROCHESTER	获取价格	63A, 600V, N-CHANNEL IGBT, TO-247
HGTG32N60E2	INTERSIL	获取价格	32A, 600V N-Channel IGBT
HGTG34N100E2	INTERSIL	获取价格	34A, 1000V N-Channel IGBT
HGTG40N6	HARRIS	获取价格	70A, 600V, UFS Series N-Channel IGBT
HGTG40N60A4	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT
HGTG40N60A4	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT
HGTG40N60A4	ONSEMI	获取价格	600V，SMPS IGBT
HGTG40N60A4_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247. 3 P
HGTG40N60B3	INTERSIL	获取价格	70A, 600V, UFS Series N-Channel IGBT

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