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HGTG30N60C3D PDF预览

HGTG30N60C3D

更新时间: 2024-11-24 22:51:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体二极管晶体管电动机控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
8页 146K
描述
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGTG30N60C3D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.22Is Samacsys:N
其他特性:LOW CONDUCTION LOSS最大集电极电流 (IC):63 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
最大降落时间(tf):275 ns门极发射器阈值电压最大值:6 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):208 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):550 ns标称接通时间 (ton):85 ns
Base Number Matches:1

HGTG30N60C3D 数据手册

 浏览型号HGTG30N60C3D的Datasheet PDF文件第2页浏览型号HGTG30N60C3D的Datasheet PDF文件第3页浏览型号HGTG30N60C3D的Datasheet PDF文件第4页浏览型号HGTG30N60C3D的Datasheet PDF文件第5页浏览型号HGTG30N60C3D的Datasheet PDF文件第6页浏览型号HGTG30N60C3D的Datasheet PDF文件第7页 
HGTG30N60C3D  
Data Sheet  
December 2001  
63A, 600V, UFS Series N-Channel IGBT  
with Anti-Parallel Hyperfast Diodes  
Features  
o
• 63A, 600V at T = 25 C  
C
The HGTG30N60C3D is a MOS gated high voltage  
switching device combining the best features of MOSFETs  
and bipolar transistors. The device has the high input  
impedance of a MOSFET and the low on-state conduction  
loss of a bipolar transistor. The much lower on-state voltage  
drop varies only moderately between 25 C and 150 C. The  
IGBT used is the development type TA49051. The diode  
used in anti-parallel with the IGBT is the development type  
TA49053.  
o
Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Hyperfast Anti-Parallel Diode  
o
o
Packaging  
JEDEC STYLE TO-247  
The IGBT is ideal for many high voltage switching applications  
operating at moderate frequencies where low conduction  
losses are essential.  
E
C
G
Formerly Developmental Type TA49014.  
Ordering Information  
PART NUMBER  
PACKAGE  
BRAND  
G30N60C3D  
HGTG30N60C3D  
TO-247  
NOTE: When ordering, use the entire part number.  
Symbol  
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGTG30N60C3D Rev. B  

HGTG30N60C3D 替代型号

型号 品牌 替代类型 描述 数据表
STGW35NB60SD STMICROELECTRONICS

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