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FDMC3020DC PDF预览

FDMC3020DC

更新时间: 2024-10-29 11:15:03
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 446K
描述
N 沟道,双 CoolTM 33 PowerTrench® MOSFET,30V,40A,6.25mΩ

FDMC3020DC 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-N5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:8 weeks风险等级:1.56
Is Samacsys:N雪崩能效等级(Eas):60 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):40 A
最大漏极电流 (ID):17 A最大漏源导通电阻:0.00625 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-240BA
JESD-30 代码:S-PDSO-N5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMC3020DC 数据手册

 浏览型号FDMC3020DC的Datasheet PDF文件第2页浏览型号FDMC3020DC的Datasheet PDF文件第3页浏览型号FDMC3020DC的Datasheet PDF文件第4页浏览型号FDMC3020DC的Datasheet PDF文件第5页浏览型号FDMC3020DC的Datasheet PDF文件第6页浏览型号FDMC3020DC的Datasheet PDF文件第7页 
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