Datasheet > FDMC510P-F106

FDMC510P-F106

更新时间： 2024-09-16 11:14:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	180K
描述
-20V P沟道PowerTrench® MOSFET

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中文翻译

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数据手册

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FDMC510P-F106 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel,

POWERTRENCH⁾

MAX

I MAX

DS(on)

−20 V

8 mW @ −4.5 V

9.8 mW @ −2.5 V

13 mW @ −1.8 V

17 mW @ −1.5 V

−18 A

-20 V, -18 A, 8.0 mW

FDMC510P

General Description

This P−Channel MOSFET is produce using onsemi’s advanced

Pin 1

POWERTRENCH process that has been optimized for r

switching performance and ruggedness.

DS(ON)

Features

• Max r

= 8.0 mW at V = −4.5 V, I = −12 A

GS D

DS(on)

Top

Bottom

= 9.8 mW at V = −2.5 V, I = −10 A

WDFN8 3.3x3.3, 0.65P

(MLP 3.3x3.3)

= 13 mW at V = −1.8 V, I = −9.3 A

= 17 mW at V = −1.5 V, I = −8.3 A

CASE 511DH

• High Performance Trench Technology for Extremely Low r

DS(on)

• High Power and Current Handling Capability in a Widely Used

MARKING DIAGRAM

Surface Mount Package

• 100% UIL Tested

FDMC

510P

ALYW

• HBM ESD Capability Level >2 kV Typical (Note 4)

• This Device is Pb−Free, Halide Free and is RoHS Compliant

Applications

• Battery Management

• Load Switch

FDMC510P= Device Code

= Assembly Site

= Wafer Lot Number

= Assembly Start Week

PIN ASSIGNMENT

P−Channel MOSFET

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of

this data sheet.

Publication Order Number:

August, 2022 − Rev. 4

FDMC510P/D

12 3 4 5 6 7 8

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