Datasheet > FDMC5614P

FDMC5614P

更新时间： 2024-09-15 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关脉冲光电二极管 PC
页数	文件大小	规格书
7页	273K
描述
P-Channel PowerTrench MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

FDMC5614P 数据手册

January 2007

FDMC5614P

P-Channel PowerTrench^®MOSFET

-60V, -13.5A, 100mΩ

Features

General Description

Max r_DS(on)= 100mΩ at V_GS= -10V, I_D= -5.7A

Max r_DS(on)= 135mΩ at V_GS= -4.5V, I_D= -4.4A

Low gate charge

This P-Channel MOSFET is a rugged gate version of Fairchild

Semiconductor's advanced PowerTrench^®process. It has been

optimized for power management applications requiring a wide

range of gate drive voltage ratings (4.5V-20V).

Fast switching speed

High performance trench technology for extremely low r_DS(on)

High power and current handling capability

RoHS Compliant

Application

Power management

Load switch

Battery protection

Bottom

Top

Power 33

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

-60

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

_C= 25°C

-13.5

-14

I_D

T_A= 25°C

(Note 1a)

-5.7

-Pulsed

-23

Power Dissipation

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

2.1

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.0

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

8mm

Quantity

5614P

FDMC5614P

Power 33

7’’

3000 units

FDMC5614P Rev.C

www.fairchildsemi.com

12 3 4 5 6 7

中文翻译

下载PDF

FDMC5614P 替代型号

型号	品牌	替代类型	描述	数据表
NTTFS5116PLTAG	ONSEMI	功能相似	Power MOSFET 60 V, 20 A, 52m

与FDMC5614P相关器件

型号	品牌	获取价格	描述	数据表
FDMC610P	ONSEMI	获取价格	P 沟道 PowerTrench® MOSFET -12V，-80A，3.9mΩ
FDMC612PZ	ONSEMI	获取价格	P 沟道 PowerTrench® MOSFET -20V，-14A，8.4mΩ
FDMC6296	FAIRCHILD	获取价格	30V Single N-Channel Logic-Level Power Trench® MOSFET, 8LD,MLP,DUAL, 3.3MM SQUARE,
FDMC6296	ROCHESTER	获取价格	11500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8
FDMC6675BZ	FAIRCHILD	获取价格	P-Channel Power Trench® MOSFET -30 V, -20 A,
FDMC6675BZ	ONSEMI	获取价格	P 沟道 Power Trench® MOSFET -30V，-20A，14.4mΩ
FDMC6679AZ	FAIRCHILD	获取价格	P-Channel PowerTrench® MOSFET -30 V, -20 A, 1
FDMC6679AZ	ONSEMI	获取价格	P 沟道，Power Trench® MOSFET，-30V，-20A，10mΩ
FDMC6683PZ	FAIRCHILD	获取价格	Power Field-Effect Transistor, 14A I(D), 20V, 0.0084ohm, 1-Element, P-Channel, Silicon, Me
FDMC6683PZ	ONSEMI	获取价格	Power Field-Effect Transistor, 14A I(D), 20V, 0.0084ohm, 1-Element, P-Channel, Silicon, Me