Datasheet > FDMC6679AZ

FDMC6679AZ

更新时间： 2024-11-06 11:15:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	230K
描述
P 沟道，Power Trench® MOSFET，-30V，-20A，10mΩ

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中文翻译

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数据手册

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FDMC6679AZ 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel,

POWERTRENCH⁾

Pin 1

-30 V, -20 A, 10 mW

Bottom

Top

FDMC6679AZ

WDFN8 3.3x3.3, 0.65P

CASE 511DH

General Description

The FDMC6679AZ has been designed to minimize losses in load

switch applications. Advancements in both silicon and package

MARKING DIAGRAM

technologies have been combined to offer the lowest r

protection.

and ESD

DS(on)

FDMC

6679AZ

ALYW

Features

• Max r

= 10 mW at V = −10 V, I = −11.5 A

GS D

DS(on)

= 18 mW at V = −4.5 V, I = −8.5 A

• HBM ESD Protection Level of 8 kV Typical (Note 3)

FDMC6679AZ = Specific Device Code

• Extended V

range (−25 V) for Battery Applications

GSS

= Assembly Location

= Wafer Lot Number

= Assembly Start Week

• High Performance Trench Technology for Extremely Low r

• High Power and Current Handling Capability

• This Device is Pb−Free and Halide Free

DS(on)

Applications

PIN ASSIGNMENT

• Load Switch in Notebook and Server

• Notebook Battery Pack Power Management

ORDERING INFORMATION

See detailed ordering and shipping information on page 6

of this data sheet.

Publication Order Number:

August, 2022 − Rev. 5

FDMC6679AZ/D

12 3 4 5 6 7 8

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