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FDMC510P

更新时间: 2024-11-05 12:01:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
7页 277K
描述
P-Channel PowerTrench MOSFET

FDMC510P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:MLP
包装说明:SMALL OUTLINE, S-PDSO-N5针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.68
Is Samacsys:N雪崩能效等级(Eas):37 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):54 A
最大漏极电流 (ID):12 A最大漏源导通电阻:0.008 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-PDSO-N5
JESD-609代码:e4湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):41 W
最大脉冲漏极电流 (IDM):50 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDMC510P 数据手册

 浏览型号FDMC510P的Datasheet PDF文件第2页浏览型号FDMC510P的Datasheet PDF文件第3页浏览型号FDMC510P的Datasheet PDF文件第4页浏览型号FDMC510P的Datasheet PDF文件第5页浏览型号FDMC510P的Datasheet PDF文件第6页浏览型号FDMC510P的Datasheet PDF文件第7页 
June 2010  
FDMC510P  
P-Channel PowerTrench® MOSFET  
-20 V, -18 A, 8.0 mΩ  
Features  
General Description  
„ Max rDS(on) = 8.0 mat VGS = -4.5 V, ID = -12 A  
„ Max rDS(on) = 9.8 mat VGS = -2.5 V, ID = -10 A  
„ Max rDS(on) = 13 mat VGS = -1.8 V, ID = -9.3 A  
„ Max rDS(on) = 17 mat VGS = -1.5 V, ID = -8.3 A  
„ High performance trench technology for extremely low rDS(on)  
This P-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced Power Trench® process that has  
been optimized for rDS(ON), switching performance and  
ruggedness.  
Applications  
„ High power and current handling capability in a widely used  
surface mount package  
„ Battery Management  
„ Load Switch  
„ 100% UIL Tested  
„ Termination is Lead-free and RoHS Compliant  
„ HBM ESD capability level >2 KV typical (Note 4)  
Bottom  
Top  
Pin 1  
G
S
S
S
D
D
D
D
MLP 3.3x3.3  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
-20  
±8  
V
V
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25 °C  
C = 25 °C  
-18  
T
-54  
ID  
A
TA = 25 °C  
(Note 1a)  
(Note 1a)  
-12  
-Pulsed  
-50  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
37  
mJ  
W
TC = 25 °C  
TA = 25 °C  
41  
PD  
Power Dissipation  
2.3  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
3
°C/W  
(Note 1a)  
53  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ’’  
Tape Width  
Quantity  
FDMC510P  
FDMC510P  
MLP 3.3X3.3  
12 mm  
3000 units  
©2010 Fairchild Semiconductor Corporation  
FDMC510P Rev.C5  
www.fairchildsemi.com  
1

FDMC510P 替代型号

型号 品牌 替代类型 描述 数据表
SI7123DN-T1-GE3 VISHAY

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