FDMC4D9P20X8
P‐Channel Power Trench)
MOSFET
−20 V, −75 A, 4.9 mW
General Description
This P−Channel MOSFET is produced using ON Semiconductor’s
www.onsemi.com
advanced PowerTrench® process that has been optimized for r
,
DS(on)
switching performance and ruggedness.
V
DS
R
MAX
I MAX
D
DS(ON)
4.9 mꢀ @ −4.5 V
6.5 mꢀ @ −2.5 V
16.4 mꢀ @ −1.8 V
Features
−20 V
−75 A
• Max r
• Max r
= 4.9 mꢀ at V = −4.5 V, I = −18 A
GS D
DS(on)
= 16.4 mꢀ at V = −1.8 V, I = −9 A
DS(on)
GS
D
• High Performance Trench Technology for Extremely Low r
DS(on)
• High Power and Current Handling Capability in a Widely Used
D (5−8)
Surface Mount Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
G (4)
Applications
• Load Switch
S (1−3)
• Battery Management
• Power Management
• Reverse Polarity Protection
P-Channel MOSFET
Pin 1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Ratings
−20
Units
V
DS
V
GS
V
V
A
Top
Bottom
PQFN8
CASE 483AX
12
I
D
Continuous, T = 25°C (Note 5)
−75
−47
−18
C
Continuous, T = 100°C (Note 5)
C
Continuous, T = 25°C (Note 1a)
A
MARKING DIAGRAM
Pulsed (Note 4)
−335
1−S
2−S
8−D
7−D
E
Single Pulse Avalanche Energy
(Note 3)
54
mJ
W
AS
$Y&Z&3&K
FDMC
4D9P20X
P
Power Dissipation:
D
3−S
4−G
6−D
5−D
T
= 25°C
40
2.4
C
T = 25°C (Note 1a)
A
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
FDMC4D9P20X8 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
January, 2018 − Rev. 3
FDMC4D9P20X8/D