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FDMC4D9P20X8 PDF预览

FDMC4D9P20X8

更新时间: 2024-09-16 11:12:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 377K
描述
P 沟道,Power Trench® MOSFET,-20V,-75A,4.9mΩ

FDMC4D9P20X8 数据手册

 浏览型号FDMC4D9P20X8的Datasheet PDF文件第2页浏览型号FDMC4D9P20X8的Datasheet PDF文件第3页浏览型号FDMC4D9P20X8的Datasheet PDF文件第4页浏览型号FDMC4D9P20X8的Datasheet PDF文件第5页浏览型号FDMC4D9P20X8的Datasheet PDF文件第6页浏览型号FDMC4D9P20X8的Datasheet PDF文件第7页 
FDMC4D9P20X8  
P‐Channel Power Trench)  
MOSFET  
−20 V, −75 A, 4.9 mW  
General Description  
This P−Channel MOSFET is produced using ON Semiconductor’s  
www.onsemi.com  
advanced PowerTrench® process that has been optimized for r  
,
DS(on)  
switching performance and ruggedness.  
V
DS  
R
MAX  
I MAX  
D
DS(ON)  
4.9 m@ −4.5 V  
6.5 m@ −2.5 V  
16.4 m@ −1.8 V  
Features  
−20 V  
−75 A  
Max r  
Max r  
= 4.9 mat V = −4.5 V, I = 18 A  
GS D  
DS(on)  
= 16.4 mat V = −1.8 V, I = 9 A  
DS(on)  
GS  
D
High Performance Trench Technology for Extremely Low r  
DS(on)  
High Power and Current Handling Capability in a Widely Used  
D (5−8)  
Surface Mount Package  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
G (4)  
Applications  
Load Switch  
S (1−3)  
Battery Management  
Power Management  
Reverse Polarity Protection  
P-Channel MOSFET  
Pin 1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current:  
Ratings  
−20  
Units  
V
DS  
V
GS  
V
V
A
Top  
Bottom  
PQFN8  
CASE 483AX  
12  
I
D
Continuous, T = 25°C (Note 5)  
−75  
−47  
−18  
C
Continuous, T = 100°C (Note 5)  
C
Continuous, T = 25°C (Note 1a)  
A
MARKING DIAGRAM  
Pulsed (Note 4)  
−335  
1−S  
2−S  
8−D  
7−D  
E
Single Pulse Avalanche Energy  
(Note 3)  
54  
mJ  
W
AS  
$Y&Z&3&K  
FDMC  
4D9P20X  
P
Power Dissipation:  
D
3−S  
4−G  
6−D  
5−D  
T
= 25°C  
40  
2.4  
C
T = 25°C (Note 1a)  
A
T , T  
Operating and Storage Junction  
Temperature Range  
−55 to +150  
°C  
J
STG  
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Data Code (Year & Week)  
= Lot  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
FDMC4D9P20X8 = Specific Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
January, 2018 − Rev. 3  
FDMC4D9P20X8/D  

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