Datasheet > FDMC4435BZ-F126

FDMC4435BZ-F126

更新时间： 2024-09-16 11:10:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	591K
描述
-30V P-Channel Power Trench® MOSFET

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FDMC4435BZ-F126 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel,

POWERTRENCH⁾

-30 V, -18 A, 20 mW

Top

Bottom

WDFN8 3.3x3.3, 0.65P

CASE 511DR

FMDC4435BZ/FDMC4435BZ−F127

FDMC4435BZ,

FDMC4435BZ-F127,

FDMC4435BZ-F127-L701

Pin 1

General Description

This P−Channel MOSFET is produced using onsemi’s advanced

POWERTRENCH process that has been especially tailored to

minimize the on−state resistance. This device is well suited for Power

Management and load switching applications common in Notebook

Computers and Portable Battery Packs.

Bottom

Top

WDFN8 3.3x3.3, 0.65P

CASE 511DQ

(Option A)

FDMC4435BZ−F127−L701

Features

 Max r

= 20 mW at V = −10 V, I = −8.5 A

GS D

DS(on)

MARKING DIAGRAM

= 37 mW at V = −4.5 V, I = −6.3 A

 Extended V

Range (−25 V) for Battery Applications

GSS

FDMC

4435BZ

ALYW

ON AXYKK

FDMC

 High Performance Trench Technology for Extremely Low r

 High Power and Current Handling Capability

 HBM ESD Protection Level > 7 kV Typical*

 100% UIL Tested

DS(on)

4435BZ

FDMC4435BZ/

FDMC4435BZ−F127

FDMC4435BZ−F127−L701

 These Devices are Pb−Free and are RoHS Compliant

FDMC4435BZ = Specific Device Code

= Assembly Location

= 2−Digit Date Code

= 2−Digit Lot Run Traceability Code

= Wafer Lot Number

Applications

 High Side in DC − DC Buck Converters

 Notebook Battery Power Management

 Load Switch in Notebook

= Assembly Start Week

PIN ASSIGNMENT

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of

this data sheet.

*The diode connected between the gate and source servers only as protection

against ESD. No gate overvoltage rating is implied.

 Semiconductor Components Industries, LLC, 2010

Publication Order Number:

February, 2023 − Rev. 5

FDMC4435BZ/D

12 3 4 5 6 7...10

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