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FDMC6675BZ PDF预览

FDMC6675BZ

更新时间: 2024-11-20 11:15:19
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 366K
描述
P 沟道 Power Trench® MOSFET -30V,-20A,14.4mΩ

FDMC6675BZ 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:23 weeks风险等级:0.95
Is Samacsys:N其他特性:ULTRA-LOW RESISTANCE
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):40 A
最大漏极电流 (ID):9.5 A最大漏源导通电阻:0.0144 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-PDSO-N5
JESD-609代码:e4湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):36 W
最大脉冲漏极电流 (IDM):32 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDMC6675BZ 数据手册

 浏览型号FDMC6675BZ的Datasheet PDF文件第2页浏览型号FDMC6675BZ的Datasheet PDF文件第3页浏览型号FDMC6675BZ的Datasheet PDF文件第4页浏览型号FDMC6675BZ的Datasheet PDF文件第5页浏览型号FDMC6675BZ的Datasheet PDF文件第6页浏览型号FDMC6675BZ的Datasheet PDF文件第7页 
FDMC6675BZ  
P-Channel POWERTRENCH)  
MOSFET  
−30 V, −20 A, 14.4 mW  
Description  
www.onsemi.com  
The FDMC6675BZ has been designed to minimize losses in load  
switch applications. Advancements in both silicon and package  
V
R
MAX  
I
D MAX  
technologies have been combined to offer the lowest R  
protection.  
and ESD  
DS  
DS(on)  
DS(on)  
−30 V  
−20 A  
14.4 mW @ 10 V  
Features  
P−Channel  
Max R  
Max R  
= 14.4 mW at V = −10 V, I = 9.5 A  
GS D  
DS(on)  
= 27.0 mW at V = −4.5 V, I = 6.9 A  
DS(on)  
GS  
D
S
S
1
2
8
7
D
D
HBM ESD Protection Level of 8 kV Typical (Note 3)  
Extended V  
Range (−25 V) for Battery Applications  
GSS  
High Performance Trench Technology for Extremely Low R  
High Power and Current Handling Capability  
DS(on)  
S
3
4
6
5
D
D
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
G
Compliant  
Typical Applications  
Pin 1  
G
Load Switch in Notebook and Server  
Notebook Battery Pack Power Management  
S
S
S
D
D
D
D
Bottom  
Top  
WDFN8 3.3x3.3, 0.65P  
CASE 511DR  
MARKING DIAGRAM  
$Y&Z&2&K  
FDMC  
6675BZ  
$Y  
&Z  
&2  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
FDMC6675BZ  
= Specific Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
September, 2018 − Rev. 4  
FDMC6675BZ/D  

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