Datasheet > FDMC3612-L701

FDMC3612-L701

更新时间： 2024-11-06 11:12:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	564K
描述
N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ

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FDMC3612-L701 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

POWERTRENCH⁾

100 V, 12 A, 110 mW

Top

Bottom

FDMC3612, FDMC3612-L701

WDFN8 3.3x3.3, 0.65P

CASE 511DR

FDMC3612

General Description

This N−Channel MOSFET is produced using onsemi’s advanced

POWERTRENCH process that has been especially tailored to

minimize the on−state resistance and yet maintain superior switching

performance.

Features

Bottom

Top

• Max r

= 110 mW at V = 10 V, I = 3.3 A

GS D

DS(on)

WDFN8 3.3x3.3, 0.65P

CASE 511DQ

FDMC3612−L701

= 122 mW at V = 6 V, I = 3.0 A

• Low Profile − 1 mm Max in Power 33

• 100% UIL Tested

MARKING DIAGRAM

• These Devices are Pb−Free and are RoHS Compliant

Applications

FDMC

3612

ALYW

ON AXYKK

FDMC

• DC − DC Conversion

• PSE Switch

3612

FDMC3612

FDMC3612−L701

FDMC3612= Specific Device Code

= Assembly Location

= 2−Digit Date Code

= 2−Digit Lot Run Traceability Code

= Wafer Lot Number

= Assembly Start Week

PIN ASSIGNMENT

D 5

D 6

D 7

D 8

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of

this data sheet.

Publication Order Number:

November, 2021 − Rev. 6

FDMC3612/D

12 3 4 5 6 7...10

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