5秒后页面跳转
FDMC4435BZ PDF预览

FDMC4435BZ

更新时间: 2024-11-06 11:10:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 591K
描述
-30V P-Channel Power Trench® MOSFET

FDMC4435BZ 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-N5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:23 weeks风险等级:0.94
其他特性:ULTRA-LOW RESISTANCE雪崩能效等级(Eas):24 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):31 A
最大漏极电流 (ID):8.5 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-PDSO-N5
JESD-609代码:e4湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):31 W
最大脉冲漏极电流 (IDM):50 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDMC4435BZ 数据手册

 浏览型号FDMC4435BZ的Datasheet PDF文件第2页浏览型号FDMC4435BZ的Datasheet PDF文件第3页浏览型号FDMC4435BZ的Datasheet PDF文件第4页浏览型号FDMC4435BZ的Datasheet PDF文件第5页浏览型号FDMC4435BZ的Datasheet PDF文件第6页浏览型号FDMC4435BZ的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET – P-Channel,  
POWERTRENCH)  
8
S
S
S
G
7
6
5
1
D
D
2
-30 V, -18 A, 20 mW  
D
3
D
4
Top  
Bottom  
WDFN8 3.3x3.3, 0.65P  
CASE 511DR  
FMDC4435BZ/FDMC4435BZF127  
FDMC4435BZ,  
FDMC4435BZ-F127,  
FDMC4435BZ-F127-L701  
Pin 1  
G
S
S
S
General Description  
D
This PChannel MOSFET is produced using onsemi’s advanced  
POWERTRENCH process that has been especially tailored to  
minimize the onstate resistance. This device is well suited for Power  
Management and load switching applications common in Notebook  
Computers and Portable Battery Packs.  
D
D
D
Bottom  
Top  
WDFN8 3.3x3.3, 0.65P  
CASE 511DQ  
(Option A)  
FDMC4435BZF127L701  
Features  
Max r  
Max r  
= 20 mW at V = 10 V, I = 8.5 A  
GS D  
DS(on)  
DS(on)  
MARKING DIAGRAM  
= 37 mW at V = 4.5 V, I = 6.3 A  
GS  
D
Extended V  
Range (25 V) for Battery Applications  
GSS  
FDMC  
4435BZ  
ALYW  
ON AXYKK  
FDMC  
High Performance Trench Technology for Extremely Low r  
High Power and Current Handling Capability  
HBM ESD Protection Level > 7 kV Typical*  
100% UIL Tested  
DS(on)  
4435BZ  
FDMC4435BZ/  
FDMC4435BZF127  
FDMC4435BZF127L701  
These Devices are PbFree and are RoHS Compliant  
FDMC4435BZ = Specific Device Code  
A
= Assembly Location  
XY  
KK  
L
= 2Digit Date Code  
= 2Digit Lot Run Traceability Code  
= Wafer Lot Number  
Applications  
High Side in DC DC Buck Converters  
Notebook Battery Power Management  
Load Switch in Notebook  
YW  
= Assembly Start Week  
PIN ASSIGNMENT  
D
D
D
5
6
7
G
S
S
S
4
3
2
D
8
1
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of  
this data sheet.  
*The diode connected between the gate and source servers only as protection  
against ESD. No gate overvoltage rating is implied.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
February, 2023 Rev. 5  
FDMC4435BZ/D  

与FDMC4435BZ相关器件

型号 品牌 获取价格 描述 数据表
FDMC4435BZ-F126 ONSEMI

获取价格

-30V P-Channel Power Trench® MOSFET
FDMC4435BZ-F127 FAIRCHILD

获取价格

Transistor
FDMC4435BZ-F127 ONSEMI

获取价格

-30V P-Channel Power Trench® MOSFET
FDMC4D9P20X8 ONSEMI

获取价格

P 沟道,Power Trench® MOSFET,-20V,-75A,4.9mΩ
FDMC510P FAIRCHILD

获取价格

P-Channel PowerTrench MOSFET
FDMC510P ONSEMI

获取价格

-20V P沟道PowerTrench® MOSFET
FDMC510P-F106 ONSEMI

获取价格

-20V P沟道PowerTrench® MOSFET
FDMC510P-T ONSEMI

获取价格

-20V P沟道PowerTrench® MOSFET
FDMC5614P FAIRCHILD

获取价格

P-Channel PowerTrench MOSFET
FDMC5614P ONSEMI

获取价格

P 沟道 Power Trench® MOSFET -60V,-13.5A,100mΩ