Datasheet > FDMC3300NZA_07

FDMC3300NZA_07

更新时间： 2024-10-28 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	254K
描述
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ

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数据手册

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FDMC3300NZA_07 数据手册

January 2007

FDMC3300NZA

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

20V, 8A, 26mΩ

Features

General Description

Max r_DS(on)= 26mΩ at V_GS= 4.5V, I_D= 8.0A

Max r_DS(on)= 34mΩ at V_GS= 2.5V, I_D= 7.0A

>2000V ESD protection

This dual N-Channel MOSFET has been designed using

Fairchild Semiconductor's advanced PowerTrench^®process to

optimize the r_DS(on)@ V_GS= 2.5V on special MLP lead frame

with all the drains on one side of the package.

Low Profile - 1mm maximum - in the new package MLP

3.3x3.3 mm

RoHS Compliant

Application

Li-lon Battery Pack

D 2

D 1

G 2

S 2

G 1

Power 33

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Rating

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

±12

(Note 1a)

I_D

P_D

Power Dissipation (Steady State)

2.1

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

°C/W

135

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

8mm

Quantity

3300A

FDMC3300NZA

Power 33

7”

3000 units

FDMC3300NZA Rev.C

www.fairchildsemi.com

12 3 4 5 6

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